NTMD4N03R2G ON Semiconductor, NTMD4N03R2G Datasheet - Page 5

• Manufacturer Part Number: NTMD4N03R2G
• Description: MOSFET PWR N-CH DL 4A 30V 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD4N03R2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.048 Ohms
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTMD4N03R2GOS; NTMD4N03R2GOS; NTMD4N03R2GOSTR

are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse
recovery characteristics which play a major role in
determining switching losses, radiated noise, EMI and RFI.
the body diode itself. The body diode is a minority carrier
device, therefore it has a finite reverse recovery time, t
to the storage of minority carrier charge, Q
the typical reverse recovery wave form of Figure 14. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery
further increases switching losses. Therefore, one would
like a diode with short t
minimize these losses.
amount of radiated noise, voltage spikes, and current
ringing. The mechanisms at work are finite irremovable
circuit parasitic inductances and capacitances acted upon by
The switching characteristics of a MOSFET body diode
System switching losses are largely due to the nature of
The abruptness of diode reverse recovery effects the
10
8
6
4
2
0
0
V
Drain−to−Source Voltage versus Total Charge
Q
DS
1
1
Q
2
Figure 8. Gate−to−Source and
Q
2
g
, TOTAL GATE CHARGE (nC)
3
Q
rr
4
T
and low Q
5
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
0
4
3
2
1
Figure 10. Diode Forward Voltage versus Current
6
0.5
RR
V
T
J
GS
7
V
= 25 C
specifications to
SD
RR
V
= 0 V
GS
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
I
T
D
, as shown in
J
8
= 4 A
= 25 C
0.6
9
http://onsemi.com
NTMD4N03R2
rr
, due
10
30
20
10
0
5
0.7
high di/dts. The diode’s negative di/dt during t
controlled by the device clearing the stored charge.
However, the positive di/dt during t
diode characteristic and is usually the culprit that induces
current ringing. Therefore, when comparing diodes, the
ratio of t
abruptness and thus gives a comparative estimate of
probable noise generated. A ratio of 1 is considered ideal and
values less than 0.5 are considered snappy.
low voltage MOSFETs, high cell density MOSFET diodes
are faster (shorter t
reverse recovery characteristic. The softness advantage of
the high cell density diode means they can be forced through
reverse recovery at a higher di/dt than a standard cell
MOSFET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter
recovery time and lower switching losses.
100
Compared to ON Semiconductor standard cell density
10
1
1
V
I
V
Figure 9. Resistive Switching Time Variation
D
DD
GS
0.8
= 4 A
b
/t
= 15 V
= 10 V
a
serves as a good indicator of recovery
R
versus Gate Resistance
rr
G
), have less stored charge and a softer
, GATE RESISTANCE ( )
0.9
10
b
is an uncontrollable
a
t
d(off)
is directly
t
d(on)
100
t
t
f
r