IRLHS6276TRPBF International Rectifier, IRLHS6276TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRLHS6276TRPBF
• Description: MOSFET 2N-CH 20V 4.5A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLHS6276TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 3.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 1.1V @ 10µA
• Gate Charge (qg) @ Vgs: 3.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 310pF @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 45 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 1.5 W
• Gate Charge Qg: 3.1 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLHS6276PbF
Fig 7. Typical Source-Drain Diode Forward Voltage
4
100
0.1
10
10
1
9
8
7
6
5
4
3
2
1
0
0.0
0.01
25
100
0.1
Fig 9. Maximum Drain Current vs.
10
1E-006
1
Case (Bottom) Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
T J = 150°C
V SD , Source-to-Drain Voltage (V)
0.4
50
T C , Case Temperature (°C)
D = 0.50
0.01
0.02
0.20
0.05
0.10
0.8
75
T J = 25°C
SINGLE PULSE
( THERMAL RESPONSE )
Limited By Package
1E-005
100
1.2
V GS = 0V
125
1.6
t 1 , Rectangular Pulse Duration (sec)
150
2.0
0.0001
0.001
Fig 10. Threshold Voltage vs. Temperature
100
1.2
1.0
0.8
0.6
0.4
0.2
0.1
10
1
-75 -50 -25
0
Fig 8. Maximum Safe Operating Area
Tc = 25°C
Tj = 150°C
Single Pulse
Limited by
Wire Bond
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
V DS , Drain-to-Source Voltage (V)
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
I D = 25µA
0.01
0
1
10msec
25
DC
50
75 100 125 150
10
www.irf.com
100µsec
0.1
1msec
100