MBR2H100SFT3G ON Semiconductor, MBR2H100SFT3G Datasheet - Page 4

• Manufacturer Part Number: MBR2H100SFT3G
• Description: DIODE SCHOTTKY 2A 100V SOD-123FL
• Manufacturer: ON Semiconductor

Specifications of MBR2H100SFT3G

• Voltage - Forward (vf) (max) @ If: 840mV @ 2A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 40µA @ 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -

1000
0.01
0.01
100
100
1.0
0.1
1.0
0.1
10
10
0.000001
0.000001
50% (DUTY CYCLE)
2.0%
1.0%
5.0%
25%
10%
50% (DUTY CYCLE)
10%
5.0%
2.0%
25%
1.0%
SINGLE PULSE
SINGLE PULSE
0.00001
0.00001
Figure 8. Thermal Response, Junction−to−Ambient (20 mm
Figure 9. Thermal Response, Junction−to−Ambient (1 in
0.0001
140
120
100
0.0001
80
60
40
20
0
0
10
TYPICAL CHARACTERISTICS
0.001
0.001
20
V
R
Figure 7. Capacitance
30
, REVERSE VOLTAGE (V)
http://onsemi.com
40
0.01
0.01
PULSE TIME (s)
PULSE TIME (s)
50
4
60
70
0.1
0.1
T
80
J
= 25°C
90
1.0
1.0
100
2
2
pad)
pad)
10
10
100
100
1000
1000