NTLUD3A260PZTAG ON Semiconductor, NTLUD3A260PZTAG Datasheet
NTLUD3A260PZTAG
Specifications of NTLUD3A260PZTAG
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NTLUD3A260PZTAG Summary of contents
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NTLUD3A260PZ Power MOSFET −20 V, −2.1 A, mCoolt Dual P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package Features • UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction • Low Profile UDFN 1.6x1.6x0.55 mm for Board Space Saving • ESD Protected ...
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THERMAL RESISTANCE RATINGS Junction-to-Ambient – Steady State (Note 3) Junction-to-Ambient – t ≤ (Note 3) Junction-to-Ambient – Steady State min Pad (Note 4) ELECTRICAL CHARACTERISTICS (T Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero ...
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25° −4 −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.80 0.70 0.60 0.50 0.40 ...
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C iss 300 200 100 C oss C rss −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 V = −4 − ...
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... DEVICE ORDERING INFORMATION Device NTLUD3A260PZTAG NTLUD3A260PZTBG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. TYPICAL CHARACTERISTICS ≤ − 25° LIMIT ...
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... NOTE 3 0.05 C 0.50 PITCH *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...