EE-SY125 Omron, EE-SY125 Datasheet - Page 2

• Manufacturer Part Number: EE-SY125
• Description: OPTO SENSOR 1MM REFLECT SMD
• Manufacturer: Omron

Specifications of EE-SY125

• Sensing Distance: 0.039" (1mm)
• Sensing Method: Reflective
• Voltage - Collector Emitter Breakdown (max): 30V
• Current - Collector (ic) (max): 20mA
• Current - Dc Forward (if): 50mA
• Output Type: Phototransistor
• Response Time: 35µs, 25µs
• Mounting Type: Surface Mount, Gull Wing
• Package / Case: 4-SMD
• Operating Temperature: -25°C ~ 85°C
• Termination Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: EESY125; OR557

I Engineering Data
Relative Collector Current vs.
Card Moving Distance (2)
Forward Current vs. Collector
Dissipation Temperature Rating
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Response Time vs. Load Resistance
Characteristics (Typical)
Ambient temperature Ta (°C)
Card moving distance L (mm)
Ambient temperature Ta (°C)
P
I
F
C
Light current I
L
I
V
F
(µA)
CE
= 4 mA
= 2 V
Light Current vs. Forward Current
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Sensing Distance Characteristics
(Typical)
Response Time Measurement
Circuit
Output
Input
Input
Ta = 25°C
V
d = 1 mm
Sensing object:
Aluminum-deposited
surface
Ambient temperature Ta (°C)
CE
= 2 V
Forward current I
Distance d (mm)
90 %
10 %
T
I
V
d = 1 mm
Sensing object:
Aluminum-deposited
surface
F
A
CE
= 4 mA
= 25°C
Photomicrosensor (Reflective)
= 2 V
F
(mA)
Output
Response Time vs. Load Resistance
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Relative Light Current vs.
Card Moving Distance (1)
Collector−Emitter voltage V
Card moving distance L (mm)
Ta = 25°C
d = 1 mm
Sensing object:
Aluminum-deposited
surface
Light current I
EE-SY125
L
(mA)
CE
(V)
299