RPR-220PC30N Rohm Semiconductor, RPR-220PC30N Datasheet
RPR-220PC30N
Manufacturer Part Number
RPR-220PC30N
Description
PHOTOINTERRUPTER REFL 800NM
Manufacturer
Rohm Semiconductor
Specifications of RPR-220PC30N
Sensing Method
Reflective
Aperture Width
2.2 mm
Termination Style
Through Hole
Aperture Orientation
Horizontal
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
846-1014
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RPR-220PC30N
Manufacturer:
MICREL
Quantity:
3 400
RPR-220PC30N
∗ Reflector object : Standard white paper. (Reflection ratio = 90%)
Absolute maximum ratings (Ta=25°C)
Electrical and optical characteristics (Ta=25°C)
Electrical and optical characteristics curves
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation
voltage
Response time
Peak light emitting wavelength
Response time
Maximum sensitivity wavelength
120
110
100
100
90
80
70
60
50
40
30
20
10
10
Parameter
Fig.1 Relative output vs. distance
0
Parameter
1
-
0
40
Fig.4 Power dissipation / collector power
P
P
C
AMBIENT TEMPERATURE : Ta
D
-
20
dissipation vs. ambient temperature
5
DISTANCE : d
0
20
Reflective photosensor (photoreflector)
10
40
(mm)
60
15
Symbol
V
I
CE(sat)
tr tf
tr tf
CEO
V
λ
λ
I
I
λ
R
C
80
Symbol
(
F
P
P
P
°C
V
V
Topr
Tstg
V
P
P
)
CEO
ECO
I
I
C
F
R
D
C
100
20
Min.
0.08
−
−
−
−
−
−
−
−
−
Typ.
800
470
800
−25 to +85
−30 to +85
3.5
0.1
10
10
−
−
−
Limits
100
4.5
25
30
30
80
5
Fig.5 Relative output vs. ambient
120
100
30
25
20
15
10
Max.
80
60
40
20
−30
100
5
0
3.8
0.8
0.3
-
10
0
−
−
−
−
−
40
−20
temperature
AMBIENT TEMPERATURE : Ta (°C)
AMBIENT TEMPERATURE : Ta
Fig.2 Forward current vs.
-
−10
20
Unit
mA
nm
μA
μA
nm
nm
μs
μs
V
V
0 10 20
ambient temperature
0
Unit
mW
mW
mA
mA
°C
°C
V
V
V
I
V
V
V
I
V
I
∗ Non-coherent Infrared light emitting diode used.
V
∗ This product is not designed to be protected against electromagnetic wave.
F
F
F
= 20mA
CC
20
= 20mA
R
CE
CE
= 20mA, I
CE
= 5V
= 5V, I
= 10V
= 2V, I
=10 V, I
30
40
40
C
F
= 1mA, R
50
= 10mA
C
F
= 20mA, R
= 0.1mA
60
60
70 80 90
80
(
L
°C
= 100Ω
)
Conditions
L
100
= 100Ω
−
−
Printers
MFP (Multi-function Printer)
1) A plastic lens is used for high sensitivity.
2) A built-in visible light filter minimizes the
3) Lightweight and compact.
influence of stray light.
Applications
Features
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
25
20
15
10
5
0
0
0
0
Fig.6 Collector current vs.
Fig.3 Forward current vs.
FORWARD CURRENT : I
FORWARD VOLTAGE : V
5
1
forward current
forward voltage
∗
∗
∗
10
2
Reflector
15
3
F
(mA)
F
20
4
(V)
Reflective
photointerrupter
25
5
d = 6mm
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RPR-220PC30N Summary of contents
Page 1
... RPR-220PC30N Reflective photosensor (photoreflector) Absolute maximum ratings (Ta=25°C) Parameter Symbol Forward current Reverse voltage Power dissipation Collector-emitter voltage V Emitter-collector voltage V Collector current Collector power dissipation Operating temperature Topr Storage temperature Tstg Electrical and optical characteristics (Ta=25°C) Parameter Symbol Forward voltage ...
Page 2
Dimensions (Unit : mm) 6.4 2.8 (2.8) 0.8 0.7 I =20mA 0.6 F 0.5 I =15mA F 0.4 0.3 I =10mA F 0.2 I =5mA F 0 COLLECTOR-EMITTER ...
Page 3
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...