TCST1030 Vishay, TCST1030 Datasheet - Page 2

• Manufacturer Part Number: TCST1030
• Description: SENSR OPTO SLOT 3.1MM TRANS THRU
• Manufacturer: Vishay
• Type: Unamplifiedr

Specifications of TCST1030

• Sensing Distance: 0.122" (3.1mm)
• Sensing Method: Transmissive
• Output Configuration: Phototransistor
• Current - Dc Forward (if): 60mA
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 70V
• Response Time: 15µs, 10µs
• Mounting Type: Through Hole
• Package / Case: Slotted Module, 4-Lead Dual Row
• Operating Temperature: -25°C ~ 85°C
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Wavelength: 950 nm
• Output Collector Emitter Voltage (detector): 70 V
• Maximum Reverse Voltage (emitter): 6 V
• Maximum Collector Current (detector): 100 mA
• Slot Width: 3 mm
• Output Device: Phototransistor
• Power Dissipation: 250 mW
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 60mA
• Output Voltage: 70V
• Opto Case Style: Through Hole
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TCST1030
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
OUTPUT (DETECTOR)
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
Junction temperature
BASIC CHARACTERISTICS (T
PARAMETER
COUPLER
Collector current
Collector emitter saturation
voltage
INPUT (EMITTER)
Forward voltage
Junction capacitance
OUTPUT (DETECTOR)
Collector emitter voltage
Emitter collector voltage
Collector dark current
SWITCHING CHARACTERISTICS
Turn-on time
Turn-off time
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
95 11088
400
300
200
100
0
0
Phototransistor
Coupled device
IR-diode
T
amb
30
- Ambient Temperature (°C)
60
For technical questions, contact:
90
V
CE
R
R
V
I
L
L
I
I
F
= 25 V, I
C
C
V
TEST CONDITION
TEST CONDITION
CE
= 100 Ω (see figure 2)
= 100 Ω (see figure 2)
amb
= 10 mA, I
R
= 1 mA, V
= 1 mA, V
120
Transmissive Optical Sensor with
= 0 V, f = 1 MHz
T
= 5 V, I
I
amb
I
F
I
E
= 25 °C, unless otherwise specified)
C
= 60 mA
= 10 μA
= 1 mA
F
amb
≤ 25 °C
150
= 0 A, E = 0 lx
F
Phototransistor Output
C
CE
CE
= 10 mA
= 1 mA
= 25 °C, unless otherwise specified)
= 5 V,
= 5 V,
[e-mail]
SYMBOL
V
V
V
I
CEsat
CEO
t
t
V
CEO
ECO
I
C
on
off
C
SYMBOL
F
j
V
V
P
CEO
ECO
I
T
C
V
j
MIN.
1.2
70
7
VALUE
TYP.
1.25
100
150
100
2.4
70
50
10
15
10
7
Document Number: 83763
MAX.
100
0.8
1.5
Rev. 1.8, 20-Sep-10
UNIT
mW
mA
°C
V
V
UNIT
mA
pF
nA
μs
μs
V
V
V
V