EE-SX1070 Omron, EE-SX1070 Datasheet

EE-SX1070

Manufacturer Part Number

EE-SX1070

Description

OPTO SENSOR SLOT 8MM PC MNT

Manufacturer

Omron

Type

Unamplifiedr

Datasheets

1.EE-SX1070.pdf (2 pages)

2.EE-SX1070.pdf (4 pages)

3.EE-SX1070.pdf (1 pages)

Specifications of EE-SX1070

Sensing Distance

0.315" (8mm)

Sensing Method

Transmissive

Output Configuration

Phototransistor

Current - Dc Forward (if)

50mA

Current - Collector (ic) (max)

20mA

Voltage - Collector Emitter Breakdown (max)

30V

Response Time

4µs, 4µs

Mounting Type

Through Hole

Package / Case

PCB Mount

Operating Temperature

-25°C ~ 95°C

Aperture Orientation

Horizontal

Aperture Width

0.5 mm

Termination Style

Solder Pin

No. Of Channels

Optocoupler Output Type

Phototransistor

Input Current

30mA

Output Voltage

30V

Opto Case Style

Through Hole

No. Of Pins

Input Current Max

30mA

Output Voltage Max

10V

Body Style

Rectangular

Brand/series

SX1

Current, Switching

20 mA

Function

Vane

Indicator

LED

Light Source

Infrared

Output

NPN

Primary Type

Photoelectric

Sensing Mode

Transmissive

Technology

Photoelectric

Temperature, Operating

-25 to +85 °C

Termination

Solder

Voltage, Supply

1.5 V

Voltage, Switching

30 V

Leaded Process Compatible

Yes

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

EESX1070
OR571

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

EE-SX1070

Manufacturer:

PANASONIC/松下

Quantity:

20 000

Current page: 1 of 1
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Note: All units are in millimeters unless otherwise indicated.

EE-SX1070

Terminal No.

Emitter

Detector

Rising time

Falling time

6.2

Dimensions

Electrical and Optical Characteristics (Ta = 25°C)

Internal Circuit

(2.5)

Two, C1

Four, 0.5

Two, 0.7±0.1

Forward voltage

Reverse current

Peak emission wavelength

Light current

Dark current

Leakage current

Collector–Emitter saturated

voltage

Peak spectral sensitivity

wavelength

Name

Anode

Cathode

Collector

Emitter

Item

Four, 0.25

6±0.2

Unless otherwise specified, the

tolerances are as shown below.

Dimensions

3 mm max.

3 t mm v 6

6 t mm v 10

10 t mm v 18

18 t mm v 30

Two, 0.7±0.1 dia.

Optical

axis

LEAK

Symbol

Tolerance

±0.3

±0.375

±0.45

±0.55

±0.65

(sat)

0.5±0.1

5.2±0.1

1.2 V typ., 1.5 V max.

0.01 µA typ., 10 µA max.

940 nm typ.

0.5 mA min., 14 mA max.

2 nA typ., 200 nA max.

---

0.1 V typ., 0.4 V max.

850 nm typ.

4 µs typ.

•

Note: 1. Refer to the temperature rating chart if the ambient

Emitter

Detector

Ambient

temperature

Soldering temperature

Features

Wide model with a 8-mm-wide slot.

PCB mounting type.

High resolution with a 0.5-mm-wide aperture.

Absolute Maximum Ratings

(Ta = 25°C)

Value

2. The pulse width is 10 µs maximum with a frequency

3. Complete soldering within 10 seconds.

Photomicrosensor

temperature exceeds 25°C.

of 100 Hz.

Item

Forward current

Pulse forward

current

Reverse voltage

Collector–Emitter

voltage

Emitter–Collector

voltage

Collector current I

Collector

dissipation

Operating

Storage

---

= 30 mA

= 20 mA

= 20 mA, V

= 20 mA, I

= 4 V

= 10 V, 0 x

= 10 V

= 5 V, R

(Transmissive)

Topr

Tstg

Tsol

Symbol

Condition

CEO

ECO

= 0.1 mA

= 100 Ω, I

= 10 V

50 mA

(see note 1)

1 A

(see note 2)

4 V

30 V

---

20 mA

100 mW

(see note 1)

–25°C to

95°C

–30°C to

100°C

260°C

(see note 3)

Rated

value

= 5 mA

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