EE-SX1103 Omron, EE-SX1103 Datasheet

OPTO SENSOR SLOT TYPE 2MM

EE-SX1103

Manufacturer Part Number
EE-SX1103
Description
OPTO SENSOR SLOT TYPE 2MM
Manufacturer
Omron
Type
Unamplifiedr
Datasheets

Specifications of EE-SX1103

Sensing Distance
0.079" (2mm)
Sensing Method
Transmissive
Output Configuration
Phototransistor
Current - Dc Forward (if)
50mA
Current - Collector (ic) (max)
30mA
Voltage - Collector Emitter Breakdown (max)
30V
Response Time
10µs, 10µs
Mounting Type
Through Hole
Package / Case
PCB Mount
Operating Temperature
-25°C ~ 85°C
Aperture Width
0.4 mm
Termination Style
Solder Pin
No. Of Channels
1
Optocoupler Output Type
Phototransistor
Input Current
50mA
Output Voltage
30V
Opto Case Style
Through Hole
No. Of Pins
4
Input Current Max
50mA
Output Voltage Max
5V
Body Style
Rectangular
Brand/series
SX1
Current, Switching
30 mA
Function
Vane
Indicator
LED
Light Source
Infrared
Output
NPN
Primary Type
Photoelectric
Range, Measurement
2 mm
Sensing Mode
Transmissive
Technology
Photoelectric
Temperature, Operating
-25 to +85 °C
Termination
Solder
Voltage, Supply
1.6 V
Voltage, Switching
30 V
Leaded Process Compatible
No
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
EESX1103
OR633

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
EE-SX1103
Manufacturer:
omRon
Quantity:
800
Note: All units are in millimeters unless otherwise indicated.
80
EE-SX1103
Terminal No.
A
K
C
E
Emitter
Detector
Rising time
Falling time
Dimensions
Electrical and Optical Characteristics (Ta = 25°C)
Four, 0.5
Internal Circuit
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
Collector–Emitter saturated
voltage
Peak spectral sensitivity
wavelength
Name
Anode
Cathode
Collector
Emitter
Two, C0.5
Item
dia.
5 min.
Unless otherwise specified,
the tolerances are ±0.2 mm.
Two, C0.3
V
I
λ
I
I
I
V
λ
tr
tf
Four, 0.2
R
L
D
LEAK
P
P
F
CE
Symbol
Optical
axis
(sat)
1.3 V typ., 1.6 V max.
10 µA max.
950 nm typ.
0.5 mA min.
500 nA max.
---
0.4 V max.
800 nm typ.
10 µs typ.
10 µs typ.
Gate
Note: 1. Refer to the temperature rating chart if the ambient
Emitter
Detector
Ambient
temperature
Soldering temperature
Features
Ultra-compact with a sensor width of 5 mm and a slot width of
2 mm.
PCB mounting type.
High resolution with a 0.4-mm-wide aperture.
Absolute Maximum Ratings
(Ta = 25°C)
Value
2. Complete soldering within 3 seconds.
Photomicrosensor
temperature exceeds 25°C.
Item
Forward current
Pulse forward
current
Reverse voltage
Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current I
Collector
dissipation
Operating
Storage
I
V
I
I
V
---
I
V
V
I
V
I
F
F
F
F
F
F
R
CE
CE
CC
CC
= 50 mA
= 50 mA
= 20 mA, V
= 20 mA, I
= 20 mA
= 20 mA
= 5 V
= 10 V, 0 x
= 5 V
= 5 V, R
= 5 V, R
(Transmissive)
I
I
V
V
V
P
Topr
Tstg
Tsol
Symbol
F
FP
C
Condition
R
CEO
ECO
C
L
L
L
CE
= 0.3 mA
= 100 Ω,
= 100 Ω,
= 5 V
50 mA
(see note 1)
---
5 V
30 V
4.5 V
30 mA
80 mW
(see note 1)
–25°C to
85°C
–30°C to
100°C
260°C
(see note 2)
Rated
value

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