TM400DZ-H Powerex Inc, TM400DZ-H Datasheet - Page 2

• Manufacturer Part Number: TM400DZ-H
• Description: SCR PHSE CTRL DL MOD 800V 400A
• Manufacturer: Powerex Inc

Specifications of TM400DZ-H

• Structure: Series Connection - SCR/Diode
• Number Of Scrs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 100mA
• Current - On State (it (av)) (max): 400A
• Current - On State (it (rms)) (max): 620A
• Current - Non Rep. Surge 50, 60hz (itsm): 8000A @ 60Hz
• Mounting Type: Chassis Mount
• Package / Case: Module
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Hold (ih) (max): -

ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
V
V
V
V
V
V
I
I
I
I
di/dt
P
P
V
V
I
T
T
V
I
I
V
dv/dt
V
V
I
R
R
T (RMS)
T (AV)
TSM
2 t
FGM
RRM
DRM
GT
j
stg
RRM
RSM
R (DC)
DRM
DSM
D (DC)
GM
G (AV)
FGM
RGM
iso
TM
GT
GD
th (j-c)
th (c-f)
Symbol
Symbol
Symbol
—
—
—
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
I
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
2 t
for fusing
Parameter
Parameter
Parameter
Single-phase, half-wave 180 conduction, T
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
Charged part to case
Main terminal screw M8
Mounting screw M6
Typical value
T
T
T
T
T
T
T
Junction to case, per 1/2 module
Case to fin, conductive grease applied, per 1/2 module
Measured with a 500V megohmmeter between main terminal
and case
j
j
j
j
j
j
j
D
=125 C, V
=125 C, V
=125 C, I
=125 C, V
=25 C, V
=125 C, V
=25 C, V
=1/2V
DRM
400
480
320
400
480
320
M
D
D
TM
RRM
DRM
D
=6V, R
D
=6V, R
, I
=2/3V
=1/2V
=1200A, instantaneous meas.
G
=1.0A, T
applied
applied
L
L
DRM
DRM
=2
=2
Test conditions
j
=125 C
Conditions
TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H
800
960
640
800
960
640
H
Voltage class
C
=66 C
MITSUBISHI THYRISTOR MODULES
1200
1350
1200
1350
960
960
24
HIGH POWER GENERAL USE
Min.
0.25
500
15
10
—
—
—
—
—
—
–40~+125
–40~+125
8.83~10.8
1.96~3.92
2.7
90~110
Ratings
20~40
Limits
8000
2500
1100
Typ.
620
400
200
3.0
5.0
4.0
10
10
—
—
—
—
—
—
—
—
—
—
1600
1700
1280
1600
1700
1280
10
2H
5
INSULATED TYPE
Max.
0.05
100
1.4
3.0
0.1
60
60
—
—
—
kg·cm
kg·cm
A/ s
V/ s
Feb.1999
Unit
Unit
N·m
N·m
Unit
M
A
mA
mA
mA
C/ W
C/ W
W
W
V
V
V
V
V
V
A
A
A
V
V
A
V
g
V
V
V
2
C
C
s