VVZ175-14IO7 IXYS, VVZ175-14IO7 Datasheet - Page 2

• Manufacturer Part Number: VVZ175-14IO7
• Description: RECT BRIDGE 3PH 167A 1400V PWSE2
• Manufacturer: IXYS

Specifications of VVZ175-14IO7

• Structure: Bridge, 3-Phase - SCRs/Diodes
• Number Of Scrs, Diodes: 3 SCRs, 3 Diodes
• Voltage - Off State: 1400V
• Current - Gate Trigger (igt) (max): 100mA
• Current - On State (it (av)) (max): 167A
• Current - On State (it (rms)) (max): 89A
• Current - Non Rep. Surge 50, 60hz (itsm): 1500A, 1600A
• Current - Hold (ih) (max): 200mA
• Mounting Type: Chassis Mount
• Package / Case: PWS-E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
I
V
V
r
V
I
V
I
I
I
t
R
R
d
d
a
Dimensions in mm (1 mm = 0.0394")
© 2010 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
R
GT
GD
L
H
gd
T
S
A
F
T0
GT
GD
, I
thJC
thJH
, V
2.8 x 0.8
D
T
M6
C ~
3
2
1
Test Conditions
V
I
For power-loss calculations only
(T
V
V
T
T
I
di
T
T
I
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
F
G
G
, I
VJ
VJ
VJ
VJ
R
D
D
G
A +
VJ
= 0.3 A; t
= 0.3 A; di
26
12
/dt = 0.3 A/µs
= V
= 6 V;
= 6 V;
T
= T
= T
= 25°C; V
= 25°C; V
= 125°C)
= 200 A, T
D ~
RRM
94
80
VJM
VJM
72
25
66
; V
;
;
B -
26
G
D
G
= 30 µs
D
D
/dt = 0.3 A/µs
= V
T
T
T
T
V
V
7
= 6 V; R
= ½ V
E ~
VJ
VJ
VJ
VJ
VJ
D
D
4
5
6
DRM
=
=
= 25°C
= 25°C
= -40°C
= 25°C
= -40°C
2
2
/
/
3
3
DRM
V
V
GK
M6x12
DRM
DRM
T
T
T
= ∞
VJ
VJ
VJ
= T
= 25°C
= 25°C
Fig. 3 Surge overload current
VJM
I
FSM
900
800
700
600
500
400
300
200
100
A
10
I
FSM
-3
VVZ 110
T
T
≤
≤
≤
≤
≤
≤
≤
≤
≤
≤
≤
≤
VJ
: Crest value, t: duration
VJ
VVZ 110
= 125°C
= 45°C
0.108
0.133
1.75
0.85
0.65
10
0.8
Characteristic Values
-2
6
100
200
450
200
0.3
1.5
1.6
0.2
9.4
10
50
10
5
5
2
VVZ 175
-1
0.077
0.092
1.57
0.85
0.46
0.55
3.5
50 Hz
80% V
10
0
t
RRM
m/s
K/W
K/W
K/W
K/W
mm
mm
mΩ
s
mA
mA
mA
mA
mA
mA
mA
µs
V
V
V
V
V
2
10
1
Z
V
Fig. 1 Gate trigger characteristics
Fig. 2 DC output current at case
Fig. 4 Transient thermal impedance
I
thJC
dAV
G
0.1
10
K/W
V
120
100
1
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
80
60
40
20
A
1
0
10
0
1: I
2: I
3: I
junction to case (per leg)
-3
I
GD
temperature
VVZ 110
VVZ 110
GT
GT
GT
, T
, T
, T
, T
VJ
VJ
VJ
VJ
10
10
= 125°C
= 125°C
= 25°C
= -40°C
1
-2
50
100
10
2
-1
VVZ 110
VVZ 175
3
100
4: P
5: P
6: P
4
I
1000
G
10
GAV
GM
GM
T
C
0
t
=
= 10 W
= 0.5 W
20100706b
°C
s
2 - 2
5
5 W
mA
150
10
6
1