VVZB135-16NO1 IXYS, VVZB135-16NO1 Datasheet - Page 5

• Manufacturer Part Number: VVZB135-16NO1
• Description: RECT BRIDGE 3PH 135A 1600V E2
• Manufacturer: IXYS

Specifications of VVZB135-16NO1

• Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
• Number Of Scrs, Diodes: 3 SCRs, 3 Diodes
• Voltage - Off State: 1600V
• Current - Gate Trigger (igt) (max): 78mA
• Current - On State (it (av)) (max): 135A
• Current - Hold (ih) (max): 100mA
• Mounting Type: Chassis Mount
• Package / Case: E2
• Vrrm, Rect, (v): 1600
• Idav, Rec, (a): 135
• @ Th, Rect, (°c): -
• @ Tc, Rect, (°c): 85
• Vces, Igbt, (v): 1200
• Ic80, Igbt, (a): 67
• Vrrm, Fast Diode, (v): 1200
• If(av), Fast Diode, (a): 27
• Trr, Fast Diode, (ns): 40
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Non Rep. Surge 50, 60hz (itsm): -
• Current - On State (it (rms)) (max): -
• Lead Free Status / Rohs Status: Compliant

E
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
Z
I
0.0001
off
C
thJC
0.001
0.01
150
120
K/W
mJ
0.1
0.00001 0.0001 0.001
A
90
60
30
0
9
6
3
0
1
0.0
0
Fig. 9 Typ. output characteristics
Fig. 11 Typ. turn off energy and switching
Fig. 13 Typ. transient thermal impedance
0.5
E
off
20
1.0
times versus collector current
single pulse
40
1.5
T
VJ
V
V
R
T
0.01
= 25°C
2.0
60
VJ
CE
GE
G
= 720 V
= 22 Ω
= ±15 V
= 125°C
2.5
V
80
0.1
CE
I
C
3.0
t
T
V
VJ
100
GE
1
= 125°C
3.5
t
t
d(off)
= 15V
f
A
diode
IGBT
V
s
120
4.0
10
900
600
300
0
ns
t
R
E
10000
off
I
1000
F
100
Ω
mJ
10
90
60
30
A
0
8
6
4
2
0
0.0
0
0
Fig. 10 Typ. forward characteristics of
Fig. 12 Typ. turn off energy and switching
Fig. 14 Typ. thermistor resistance versus
E
off
0.5
10
25
free wheeling diode
times versus gate resistor
temperature
1.0
20
50
V
V
I
T
1.5
T
C
VJ
CE
GE
VJ
= 125°C
= 720 V
= ±15 V
= 50 A
= 125°C
30
75
2.0
V
100
40
F
T
2.5
VVZB 135
VJ
T
= 25°C
R
125
G
50
3.0
t
d(off)
t
f
°C
Ω
VVZB 135
V
150
3.5
60
20070912a
1000
800
600
400
200
0
ns
5 - 5
t