VVZB135-16NO1 IXYS, VVZB135-16NO1 Datasheet - Page 5
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VVZB135-16NO1
Manufacturer Part Number
VVZB135-16NO1
Description
RECT BRIDGE 3PH 135A 1600V E2
Manufacturer
IXYS
Datasheet
1.VVZB135-16NO1.pdf
(5 pages)
Specifications of VVZB135-16NO1
Structure
Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Number Of Scrs, Diodes
3 SCRs, 3 Diodes
Voltage - Off State
1600V
Current - Gate Trigger (igt) (max)
78mA
Current - On State (it (av)) (max)
135A
Current - Hold (ih) (max)
100mA
Mounting Type
Chassis Mount
Package / Case
E2
Vrrm, Rect, (v)
1600
Idav, Rec, (a)
135
@ Th, Rect, (°c)
-
@ Tc, Rect, (°c)
85
Vces, Igbt, (v)
1200
Ic80, Igbt, (a)
67
Vrrm, Fast Diode, (v)
1200
If(av), Fast Diode, (a)
27
Trr, Fast Diode, (ns)
40
Package Style
E2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Non Rep. Surge 50, 60hz (itsm)
-
Current - On State (it (rms)) (max)
-
Lead Free Status / Rohs Status
Compliant
E
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
Z
I
0.0001
off
C
thJC
0.001
0.01
150
120
K/W
mJ
0.1
0.00001 0.0001 0.001
A
90
60
30
0
9
6
3
0
1
0.0
0
Fig. 9 Typ. output characteristics
Fig. 11 Typ. turn off energy and switching
Fig. 13 Typ. transient thermal impedance
0.5
E
off
20
1.0
times versus collector current
single pulse
40
1.5
T
VJ
V
V
R
T
0.01
= 25°C
2.0
60
VJ
CE
GE
G
= 720 V
= 22 Ω
= ±15 V
= 125°C
2.5
V
80
0.1
CE
I
C
3.0
t
T
V
VJ
100
GE
1
= 125°C
3.5
t
t
d(off)
= 15V
f
A
diode
IGBT
V
s
120
4.0
10
900
600
300
0
ns
t
R
E
10000
off
I
1000
F
100
Ω
mJ
10
90
60
30
A
0
8
6
4
2
0
0.0
0
0
Fig. 10 Typ. forward characteristics of
Fig. 12 Typ. turn off energy and switching
Fig. 14 Typ. thermistor resistance versus
E
off
0.5
10
25
free wheeling diode
times versus gate resistor
temperature
1.0
20
50
V
V
I
T
1.5
T
C
VJ
CE
GE
VJ
= 125°C
= 720 V
= ±15 V
= 50 A
= 125°C
30
75
2.0
V
100
40
F
T
2.5
VVZB 135
VJ
T
= 25°C
R
125
G
50
3.0
t
d(off)
t
f
°C
Ω
VVZB 135
V
150
3.5
60
20070912a
1000
800
600
400
200
0
ns
5 - 5
t