VVZ40-12IO1 IXYS, VVZ40-12IO1 Datasheet

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VVZ40-12IO1

Manufacturer Part Number
VVZ40-12IO1
Description
RECT BRIDGE 3PH 34A 1200V KAMM
Manufacturer
IXYS
Datasheet

Specifications of VVZ40-12IO1

Structure
Bridge, 3-Phase - SCRs/Diodes
Number Of Scrs, Diodes
3 SCRs, 3 Diodes
Voltage - Off State
1200V
Current - Gate Trigger (igt) (max)
65mA
Current - On State (it (av)) (max)
34A
Current - Non Rep. Surge 50, 60hz (itsm)
320A, 340A
Current - Hold (ih) (max)
100mA
Mounting Type
PCB
Package / Case
KAMM
Vrrm, (v)
1200
Vvrms, (v)
400
Idavm, (a)
34
@ Th, (°c)
100
@ Tc, (°c)
-
Ifsm, 10 Ms, Tvj = 45°c, (a)
320
Vt0, (v)
0.85
Rt, (mohms)
15
Tvjm, (°c)
125
Rthjc, Per Chip, (k/w)
1
Rthjh, Per Chip, (k/w)
1.6
Package Style
Kamm-Modul with gate pin G2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - On State (it (rms)) (max)
-
Three Phase Half Controlled
Rectifier Bridge
Symbol
I
I
I
I
I
(di/dt)
(dv/dt)
V
P
P
T
T
T
V
M
Weight
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
© 2011 IXYS All rights reserved
1700
IXYS reserves the right to change limits, test conditions and dimensions.
1300
V
V
dAV
dAVM
FRMS
FSM
2
t
VJ
VJM
stg
RGM
GM
GAVM
ISOL
d
V
RSM
DSM
, I
, I
TSM
TRMS
cr
cr
1600
1200
V
V
RRM
DRM
V
Conditions
T
module
per leg
T
V
T
V
T
V
T
V
T
f =400 Hz, t
V
I
di
T
R
T
I
50/60 Hz, RMS
I
Mounting torque
typ.
G
T
ISOL
K
VJ
VJ
VJ
VJ
VJ
VJ
VJ
R
R
R
R
D
G
GK
= I
= 0.3 A,
/dt = 0.3 A/μs
= 100°C; module
= 2/3 V
= 0
= 0
= 0
= 0
= 45°C;
= T
= 45°C
= T
= T
= T
= T
= ∞; method 1 (linear voltage rise)
≤ 1 mA
TAVM
VJM
VJM
VJM
VJM
VJM
; V
DRM
Type
VVZ 40-12io1
VVZ 40-16io1
P
DR
=200 μs
= 2/3 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
repetitive, I
non repetitive, I
t
t
t
t = 1 min
t = 1 s
(M5)
(10-32 UNF)
p
p
p
DRM
=
= 500 μs
=
30 μs
10 ms
T
= 50 A
T
= 1/3 • I
dAV
Maximum Ratings
2
5
7
4
8
-40...+125
-40...+125
18-22
2-2.5
1000
3000
3600
320
340
290
310
510
485
420
400
150
500
125
0.5
1
34
43
25
10
10
28
5
1
6
lb.in.
A/μs
A/μs
V/μs
Nm
A
A
A
A
V~
V~
3
°C
°C
°C
W
W
W
W
2
2
2
2
A
A
A
A
A
A
A
V
g
s
s
s
s
I
V
Features
Applications
Advantages
dAVM
Package with DCB ceramic base plate
Isolation voltage 3600 V~
Planar passivated chips
Soldering terminals
UL registered E 72873
Input rectifier for switch mode power
supplies (SMPS)
Softstart capacitor charging
Electric drives and auxiliaries
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling
RRM
= 43 A
= 1200/1600 V
1
2
5
3
6
4
7
VVZ 40
8
20110113d
1 - 2

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VVZ40-12IO1 Summary of contents

Page 1

... ISOL M Mounting torque (M5) d (10-32 UNF) Weight typ. Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Maximum Ratings 320 340 290 ...

Page 2

... R per thyristor (diode); DC current thJH per module d Creeping distance on surface S d Creepage distance in air A a Max. allowable acceleration IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Characteristic Values ≤ VJM ≤ 25°C VJ ≤ ...

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