VVZ12-16IO1 IXYS, VVZ12-16IO1 Datasheet - Page 2

• Manufacturer Part Number: VVZ12-16IO1
• Description: RECT BRIDGE 3PH 20A 1600V KAMM
• Manufacturer: IXYS

Specifications of VVZ12-16IO1

• Structure: Bridge, 3-Phase - SCRs/Diodes
• Number Of Scrs, Diodes: 3 SCRs, 3 Diodes
• Voltage - Off State: 1600V
• Current - Gate Trigger (igt) (max): 65mA
• Current - On State (it (av)) (max): 20A
• Current - Non Rep. Surge 50, 60hz (itsm): 110A, 115A
• Current - Hold (ih) (max): 100mA
• Mounting Type: Chassis Mount
• Package / Case: KAMM
• Vrrm, (v): 1600
• Vvrms, (v): 500
• Idavm, (a): 15
• @ Th, (°c): 100
• @ Tc, (°c): -
• Ifsm, 10 Ms, Tvj = 45°c, (a): 110
• Vt0, (v): 1.10
• Rt, (mohms): 30
• Tvjm, (°c): 125
• Rthjc, Per Chip, (k/w): 2.50
• Rthjh, Per Chip, (k/w): 3.10
• Package Style: Kamm-Modul with gate pin G2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - On State (it (rms)) (max): -

Symbol
I
V
V
r
V
I
V
I
I
I
t
t
Q
R
R
d
d
a
© 2000 IXYS All rights reserved
R
GT
GD
L
H
gd
q
T
S
A
F
T0
GT
, I
GD
thJC
thJH
r
, V
D
T
Test Conditions
V
I
For power-loss calculations only
(T
V
V
T
T
I
di
T
T
I
T
V
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
F
G
G
, I
VJ
VJ
VJ
VJ
VJ
R
D
D
R
G
VJ
= 0.3 A; t
= 0.3 A; di
/dt = 0.3 A/ms
= V
= 6 V;
= 6 V;
= 100 V, dv/dt = 20 V/ms, V
T
= T
= T
= 25°C; V
= 25°C; V
= 125°C; I
= 125°C)
= 30 A, T
RRM
VJM
VJM
; V
;
;
G
D
G
= 30 ms
D
D
/dt = 0.3 A/ms
T
= V
VJ
= 6 V; R
= 1/2 V
= 15 A, t
= 25°C
DRM
DRM
GK
p
T
T
T
T
T
T
T
V
V
T
T
T
= 300 ms, -di/dt = 10 A/ms
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
D
D
= ¥
= 2/3 V
= 2/3 V
= T
= 25°C
= 25°C
= -40°C
= 25°C
= -40°C
= 125°C
= 25°C
= -40°C
= 125°C
D
VJM
= 2/3 V
DRM
DRM
DRM
Characteristic Values
£
£
£
£
£
£
£
£
£
£
£
£
£
£
£
typ. 150
0.42 K/W
0.52 K/W
150 mA
200 mA
100 mA
100 mA
0.3 mA
1.1
1.0
1.2
0.2
2.5 K/W
3.1 K/W
30 mW
65 mA
80 mA
50 mA
75
50 m/s
5 mA
2
5 mA
2
7 mm
7 mm
mC
ms
ms
V
V
V
V
V
2
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