VHFD16-08IO1 IXYS, VHFD16-08IO1 Datasheet - Page 3

• Manufacturer Part Number: VHFD16-08IO1
• Description: RECT BRIDGE 1PH 800V V1-A-PAK
• Manufacturer: IXYS

Specifications of VHFD16-08IO1

• Structure: Bridge, Single Phase
• Number Of Scrs, Diodes: 2 SCRs, 4 Diodes
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 65mA
• Current - On State (it (av)) (max): 16A
• Current - Non Rep. Surge 50, 60hz (itsm): 150A, 170A
• Current - Hold (ih) (max): 100mA
• Mounting Type: Chassis Mount
• Package / Case: V1A-PAK
• Vrrm, (v): 800
• Vvrms, (v): 250
• Idavm, (a): 16
• @ Th, (°c): 85
• @ Tc, (°c): -
• Ifsm, 10 Ms, Tvj = 45°c, (a): 150
• Vt0, (v): 1.00
• Rt, (mohms): 40
• Tvjm, (°c): 125
• Rthjc, Per Chip, (k/w): 2.40
• Rthjh, Per Chip, (k/w): 3.00
• Package Style: V1-A-Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - On State (it (rms)) (max): -

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
I
P
Z
F
tot
thJH
K/W
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
W
A
0.001
0
0
0
0
Fig. 3 Forward current vs. voltage
Fig. 6 Power dissipation vs. direct output current and ambient temperature
Fig. 8 Transient thermal impedance junction to heatsink
T
T
VJ
VJ
=125°C
= 25°C
drop per diode
1
5
typ.
2
10
0.01
V
F
3
15
max.
I
V
d(AV)M
4
20
A
I
0.1
FSM
120
100
25
0
80
60
40
20
A
0
0.001
0
Fig. 4 Surge overload current
50Hz, 80% V
20
40
0.01
60
RRM
1
T
80
VJ
T
T
= 45°C
VJ
amb
0.1
100 120 140
= 125°C
t
t
R
0.5 K/W
1.0 K/W
1.5 K/W
2.0 K/W
3.0 K/W
4.0 K/W
6.0 K/W
s
s
thHA
:
°C
1
10
I
I
d(AV)M
2
Constants for Z
t
1
2
3
4
A
10
10
10
i
25
20
15
10
2
A
5
0
s
3
2
1
1
0
Fig. 5 I
V
Fig. 7 Max. forward current vs.
R
= 0 V
20
R
0.01
0.4
1.69
0.9
thi
2
heatsink temperature
40
t versus time per diode
2
(K/W)
T
thJH
VJ
60
= 45°C
calculation:
3
VHFD 16
80 100 120
T
4 5 6 7 8 9
VJ
T
t
0.008
0.05
0.06
0.25
i
H
= 125°C
(s)
t
20100705a
ms
3 - 3
°C
10