VSKT430-18 Vishay, VSKT430-18 Datasheet - Page 2

• Manufacturer Part Number: VSKT430-18
• Description: SCR DBL 2SCR 1800V 430A MAGNAPAK
• Manufacturer: Vishay

Specifications of VSKT430-18

• Structure: Series Connection - All SCRs
• Number Of Scrs, Diodes: 2 SCRs
• Voltage - Off State: 1800V
• Current - On State (it (av)) (max): 430A
• Current - On State (it (rms)) (max): 675A
• Current - Non Rep. Surge 50, 60hz (itsm): 15700A, 16400A
• Current - Hold (ih) (max): 500mA
• Mounting Type: Chassis Mount
• Package / Case: SUPER MAGN-A-PAK
• Rated Repetitive Off-state Voltage Vdrm: 1800 V
• Off-state Leakage Current @ Vdrm Idrm: 100 mA
• Holding Current (ih Max): 500 mA
• Mounting Style: Screw
• Breakover Current Ibo Max: 16400 A
• Repetitive Peak Forward Blocking Voltage: 1800 V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Gate Trigger (igt) (max): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
• Other names: *IRKT430-18; IRKT430-18; IRKT430-18

VSK.430..PbF Series
Vishay Semiconductors
www.vishay.com
2
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope
resistance
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
Typical latching current
SWITCHING
PARAMETER
Maximum rate of rise of turned-on current
Typical delay time
Typical turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
RMS insulation voltage
Maximum peak reverse and
off-state leakage current
2
2
t for fusing
t for fusing
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
(SUPER MAGN-A-PAK Power Modules), 430 A
SYMBOL
SYMBOL
SYMBOL
Thyristor/Diode and Thyristor/Thyristor
V
V
I
dV/dt
I
I
T(RMS)
I
I
I
dI/dt
V
T(AV),
I
V
V
RRM
F(TO)1
F(TO)2
DRM
F(AV)
TSM,
I
FSM
I
2
r
r
I
I
INS
t
t
2
TM
FM
f1
f2
H
t
L
d
q
t
,
T
t = 1 s
T
180° conduction, half sine wave
180° conduction, half sine wave at T
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x  x I
(I >  x I
(16.7 % x  x I
(I >  x I
I
I
T
T
Gate current 1 A, dI
V
I
V
pk
pk
TM
J
J
J
J
d
R
= 130 °C, linear to V
= T
= 25 °C, anode supply 12 V resistive load
= 1500 A, T
= 1500 A, T
= T
= 0.67 % V
= 50, dV/dt = 20 V/μs, Gate 0 V 100 
= 750 A, T
J
J
maximum, rated V
maximum, I
T(AV)
T(AV)
), T
), T
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T(AV)
T(AV)
J
J
J
DRM
J
J
= T
TEST CONDITIONS
TEST CONDITIONS
= 25 °C, t
= 25 °C, t
= T
= T
TEST CONDITIONS
, T
< I <  x I
< I <  x I
J
TM
J
J
g
maximum, dI/dt = - 60 A/μs
/dt = 1 A/μs
J
maximum
maximum
= 400 A, V
= 25 °C
RRM
RRM
D
= 80 % V
p
p
DRM/
[e-mail]
= 10 ms sine pulse
= 10 ms sine pulse
T(AV)
T(AV)
Sinusoidal half wave,
initial T
V
RRM
), T
), T
DRM
DRM
J
J
applied
C
= T
= T
J
applied
= 82 °C
= T
J
J
maximum
maximum
J
maximum
Document Number: 93748
VALUES
VALUES
VALUES
12 320
1000
3000
1232
1125
1000
15.7
16.4
13.2
13.8
0.96
1.06
0.51
0.45
1.65
1.65
1000
100
430
675
871
795
500
200
82
2.0
Revision: 02-Jul-10
UNITS
UNITS
UNITS
kA
kA
V/μs
A/μs
m
mA
mA
°C
kA
μs
A
A
V
V
V
V
2
2
s
s