VMM85-02F IXYS, VMM85-02F Datasheet
VMM85-02F
Manufacturer Part Number
VMM85-02F
Description
MOSFET MOD PHASE LEG 200V Y4
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.VMM85-02F.pdf
(4 pages)
Specifications of VMM85-02F
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
25 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
84A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
450nC @ 10V
Input Capacitance (ciss) @ Vds
15000pF @ 25V
Power - Max
370W
Mounting Type
Chassis Mount
Package / Case
Y4
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.025 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
84 A
Power Dissipation
370 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Screw
Minimum Operating Temperature
- 40 C
Vdss, Max, (v)
200
Id25, Tc = 25°c, (a)
84
Rds(on), Max, Tj = 25°c, (ohms)
25
Ciss, Typ, (pf)
9600
Qg, Typ, (nc)
380
Tf, Typ, (ns)
100
Tr, Typ, (ns)
80
Pd, (w)
-
Rthjc, Max, (c/w)
0.33
Package Style
Y4-M5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VMM85-02F
Manufacturer:
IXYS
Quantity:
560
Part Number:
VMM85-02F
Quantity:
83
Company:
Part Number:
VMM85-02FS
Manufacturer:
IR
Quantity:
134
Dual Power
HiPerFET
Phaseleg Configuration
High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
P
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
Data per MOSFET unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
D25
D80
DM
GSS
DSS
stg
J
JM
DSS
DGR
GS
GSM
tot
ISOL
DSS
GS(th)
DS(on)
d
Conditions
T
T
Continuous
Transient
T
T
T
T
50/60 Hz
I
Mounting torque (M5 or 10-32 UNF)
Terminal connection torque (M5)
Typical including screws
Conditions
V
V
V
V
V
V
Pulse test, t £ 300 µs, duty cycle d £ 2%
ISOL
J
J
C
C
C
C
GS
DS
GS
DS
DS
GS
= 25°C
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 80°C
= 25°C, t
£ 1 mA
= 0 V
= V
= ±20 V DC, V
= V
= 0.8 • V
= 10 V, I
TM
GS
DSS
, I
,
Module
rr
D
p
, HDMOS
D
DSS
= 8 mA
= 10 µs, pulse width limited by T
= 0.5 • I
, V
V
DS
GS
GS
= 0
= 0 V, T
= 0 V, T
t = 1 min
t = 1 s
D25
GS
= 10 kW
TM
(T
J
J
= 25°C
= 125°C
J
Family
= 25°C, unless otherwise specified)
2.25-2.75/20-25 Nm/lb.in.
min.
200
Characteristic Values
VMM 85-02F
JM
-40 ... +150
-40 ... +125
2.5-4/22-35 Nm/lb.in.
2
Maximum Ratings
11
10
9
8
typ.
3000
3600
20
200
200
335
370
150
130
±20
±30
84
63
max.
500 nA
400 µA
25 mW
4
2 mA
V~
V~
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
3
1
2
V
I
R
10 = Kelvin Source 1
Features
• Two MOSFET's in phaseleg config.
• International standard package
• Direct copper bonded Al
• Isolation voltage 3600 V~
• Low R
• Low package inductance for high
• Kelvin source contact
Applications
• Switched-mode and resonant-mode
• Uninterruptible power supplies (UPS)
Advantages
• Easy to mount with two screws
• Space and weight savings
• High power density
• Low losses
D25
2 = Source 1
8 = Gate 2
base plate
speed switching
power supplies
DSS
DS(on)
DS(on)
= 200 V
= 84 A
= 25 mW
1
HDMOS
2
11 = Gate 1
TM
1 = Drain 1, Source 2
3 = Drain 2
9 = Kelvin Source 2
process
3
2
O
3
ceramic
11
10
1 - 4
9
8
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VMM85-02F Summary of contents
Page 1
... DSS 0.5 • I DS(on Pulse test, t £ 300 µs, duty cycle d £ 2% Data per MOSFET unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved VMM 85-02F TM Family Maximum Ratings 200 = 10 kW ...
Page 2
... Pulse test, t £ 300 µs, duty cycle d £ -di/dt = 100 A/µ IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: © 2000 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. pulsed 40 60 D25 9600 15000 pF ...
Page 3
... R @0 10V DS(on) D25 GS 1.3 R DS(on) norm. 1.2 V 1.1 1.0 0.9 0 Fig. 3 Typical normalized R 100 Fig. 5 Continuous drain current I © 2000 IXYS All rights reserved 200 175 150 7 V 125 100 Fig. 2 Typical transfer characteristics 2.50 R DS(on) 2.25 norm. ...
Page 4
... Fig. 7 Typical turn-on gate charge characteristics 100 0 Fig. 9 Typical capacitances 100 Fig. 11 Typical transconductance g © 2000 IXYS All rights reserved 1000 A I Limited 100 non-repetitive 1 300 nC 400 Fig. 8 Forward Safe Operating Area, I 200 A 150 C iss I S 100 C oss 50 C rss ...