IXFE36N100 IXYS, IXFE36N100 Datasheet
IXFE36N100
Manufacturer Part Number
IXFE36N100
Description
MOSFET N-CH 1000V 33A ISOPLUS227
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFE34N100.pdf
(2 pages)
Specifications of IXFE36N100
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
33A
Vgs(th) (max) @ Id
5.5V @ 8mA
Gate Charge (qg) @ Vgs
455nC @ 10V
Input Capacitance (ciss) @ Vds
15000pF @ 25V
Power - Max
580W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.24 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
33 A
Power Dissipation
580 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2003 IXYS All rights reserved
HiPerFET
Power MOSFET
Single MOSFET Die
Preliminary data sheet
Symbol Test Conditions
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
Symbol
(T
V
V
I
I
R
DM
D25
AR
GSS
DSS
JM
L
AR
J
stg
DSS
DGR
GS
GSM
AS
D
ISOL
DSS
GS(th)
DS(on)
d
J
= 25 C, unless otherwise specified)
T
T
T
T
Continuous
Transient
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
V
V
V
V
V
V
Note 2
S
ISOL
C
C
J
J
C
C
J
C
GS
DS
GS
DS
GS
GS
C
= 25 C
= 25 C;
= 25 C
= 25°C to 150°C
= 25°C to 150°C, R
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20V, V
= V
= 0 V
= 10V, I
Test Conditions
I
150 C, R
DM
1 mA
GS
DSS
, di/dt 100 A/ s, V
, I
D
D
D
= 3mA
= 8mA
= I
GS
Note 1
TM
G
T
= 0V
= 2
t = 1 min
t = 1 s
GS
= 1M
DD
V
DSS
T
T
36N100
34N100
J
J
= 25 C
= 125 C
1000
Min.
3.0
36N100
34N100
36N100
34N100
Characteristic Values
IXFE 36N100 1000 V 33 A
IXFE 34N100 1000 V 30 A
Typ.
-55 ... +150
-55 ... +150
Maximum Ratings
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
1000
1000
2500
3000
150
144
136
580
300
Max.
33
30
20
30
36
64
19
0.24
0.28
4
100
5
5.5
200 nA
2 mA
V/ns
mJ
V~
V~
W
C
C
C
C
A
A
A
A
V
V
V
V
A
A
V
V
J
g
Features
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
•
•
ISOPLUS 227
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
t
rr
Conforms to SOT-227B outline
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
V
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low cost
Easy to mount
Space savings
High power density
DSS
250 ns
DS (on)
HDMOS
TM
I
G
(IXFE)
D25
D = Drain
TM
D
S
DS98897A(04/03)
process
0.24
0.28
R
DS(on)
S
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IXFE36N100 Summary of contents
Page 1
... GSS DSS DS DSS 10V DS(on Note 2 © 2003 IXYS All rights reserved IXFE 36N100 1000 IXFE 34N100 1000 Maximum Ratings 1000 1000 36N100 34N100 36N100 144 34N100 136 V DD DSS 580 -55 ... +150 150 -55 ... +150 300 2500 3000 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. ...
Page 2
... Notes: 1. Pulse width limited by T JM. 2. Pulse test, t 300 ms, duty cycle Test current: T IXFE36N100 IXFE34N100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values Min. Typ. ...