IXFN38N100P IXYS, IXFN38N100P Datasheet

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IXFN38N100P

Manufacturer Part Number
IXFN38N100P
Description
MOSFET N-CH 1000V 38A SOT-227B
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFN38N100P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
210 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
38A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
350nC @ 10V
Input Capacitance (ciss) @ Vds
24000pF @ 25V
Power - Max
1000W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.21 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
38 A
Power Dissipation
1000 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
38
Rds(on), Max, Tj=25°c, (?)
0.21
Ciss, Typ, (pf)
24000
Qg, Typ, (nc)
350
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
1000
Rthjc, Max, (ºc/w)
0.125
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN38N100P
Manufacturer:
IXYS
Quantity:
1 000
Part Number:
IXFN38N100P
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Part Number:
IXFN38N100P
Quantity:
108
Polar
HiPerFET
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
V
M
Weight
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
Terminal Connection Torque (M4)
Power MOSFET
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
50/60Hz
I
Mounting Torque
Test Conditions
V
V
V
V
V
ISOL
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
≤ 1mA
= 0V, I
= V
= ± 30V, V
= V
= 10V, I
DM
, V
GS
DSS
, I
D
, V
DD
D
D
= 3mA
= 1mA
= 0.5 • I
≤ V
GS
DS
= 0V
DSS
= 0V
, T
t = 1min
t = 1s
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXFN38N100P
1000
Characteristic Values
-55 ... +150
-55 ... +150
Min.
3.5
Maximum Ratings
1.3/11.5
1.5/13
1000
1000
1000
2500
3000
± 30
± 40
300
Typ.
120
150
260
38
19
20
30
2
± 300
Max.
210 mΩ
Nm/lb.in.
Nm/lb.in.
6.5
50
4 mA
V/ns
V~
V~
nA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
J
g
V
I
R
t
miniBLOC, SOT-227 B
G = Gate
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
Advantages
Applications
D25
rr
International Standard Package
Encapsulating Epoxy meets
UL 94 V-0, Flammability Classification
miniBLOC with Aluminium Nitride
Isolation
Fast Recovery Diode
Avalanche Rated
Low package inductance
Switched-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
E153432
G
= 1000V
= 38A
≤ ≤ ≤ ≤ ≤ 210mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 300ns
S
D = Drain
D
DS99866B(7/09)
S

Related parts for IXFN38N100P

IXFN38N100P Summary of contents

Page 1

... ± 30V GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2009 IXYS CORPORATION, All Rights Reserved IXFN38N100P Maximum Ratings 1000 = 1MΩ 1000 GS ± 30 ± 120 ≤ 150° 1000 -55 ... +150 150 -55 ... +150 300 260 2500 3000 1.5/13 1.3/11.5 30 Characteristic Values Min ...

Page 2

... I = 0.5 • I 150 DSS D D25 150 0.05 Characteristic Values Min. Typ. JM 2.5 17 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN38N100P Max. SOT-227B Outline Ω 0.125 °C/W °C/W Max 150 A 1.5 V 300 ns μC A 6,404,065 B1 6,683,344 ...

Page 3

... GS 10V 2.6 2.2 9V 1.8 8V 1.4 1.0 7V 0 19A Value vs. Drain 10V 15V IXFN38N100P Fig. 2. Extended Output Characteristics @ 25º 15V GS 11V 10V Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V 38A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 ...

Page 4

... DS IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. = 125ºC J 25ºC - 40ºC 8.0 8.5 9.0 9.5 10 25ºC J 0.9 1.0 1.1 1.2 1.3 1,000.0 C iss 100.0 10.0 C oss C rss IXFN38N100P Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 500V DS 14 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.01 0.1 Pulse Width - Seconds IXFN38N100P 1 10 IXYS REF: F_38N100P(99)7-14-09-D ...

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