IXFN32N100P IXYS, IXFN32N100P Datasheet - Page 3
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IXFN32N100P
Manufacturer Part Number
IXFN32N100P
Description
MOSFET N-CH 1000V 27A SOT-227B
Manufacturer
IXYS
Series
Polar™r
Datasheet
1.IXFN32N100P.pdf
(4 pages)
Specifications of IXFN32N100P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
320 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
27A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
225nC @ 10V
Input Capacitance (ciss) @ Vds
14200pF @ 25V
Power - Max
690W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.32 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
27 A
Power Dissipation
690 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
27
Rds(on), Max, Tj=25°c, (?)
0.32
Ciss, Typ, (pf)
14200
Qg, Typ, (nc)
225
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
690
Rthjc, Max, (ºc/w)
0.180
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN32N100P
Manufacturer:
IXYS
Quantity:
1 000
Part Number:
IXFN32N100P
Quantity:
103
© 2008 IXYS CORPORATION, All rights reserved
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
32
28
24
20
16
12
32
28
24
20
16
12
8
4
0
8
4
0
2
1
0
0
0
Fig. 5. R
V
5
2
GS
1
= 10V
10
15V
4
Fig. 1. Output Characteristics
2
Fig. 3. Output Characteristics
15
DS(on)
- - - -
6
3
20
vs. Drain Current
Normalized to I
8
I
25
V
D
V
4
DS
DS
- Amperes
@ 125ºC
@ 25ºC
10
- Volts
30
- Volts
5
V
V
35
GS
GS
12
= 15V
= 15V
6
T
40
10V
10V
9V
J
14
T
= 125ºC
J
D
= 25ºC
9V
8V
7V
45
7
7V
6V
= 16A Value
8V
16
50
8
18
55
9
20
60
10
65
22
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
28
26
24
22
20
18
16
14
12
10
70
60
50
40
30
20
10
8
6
4
2
0
0
-50
-50
0
Fig. 4. R
V
Fig. 2. Extended Output Characteristics
GS
-25
-25
Fig. 6. Maximum Drain Current vs.
= 10V
5
DS(on)
vs. Junction Temperature
0
0
T
T
C
J
Case Temperature
- Degrees Centigrade
- Degrees Centigrade
10
Normalized to I
25
25
V
DS
@ 25ºC
V
- Volts
GS
15
50
50
IXFN32N100P
= 15V
I
10V
D
9V
8V
7V
= 32A
75
75
20
D
= 16A Value
100
100
I
D
= 16A
25
125
125
150
150
30