IXFE55N50 IXYS, IXFE55N50 Datasheet - Page 2

• Manufacturer Part Number: IXFE55N50
• Description: MOSFET N-CH 500V 47A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFE55N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 27.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 330nC @ 10V
• Input Capacitance (ciss) @ Vds: 9400pF @ 25V
• Power - Max: 500W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 52
• Rds(on), Max, Tj=25°c, (?): 0.09
• Ciss, Typ, (pf): 9400
• Qg, Typ, (nc): 330
• Trr, Typ, (ns): -
• Trr, Max, (ns): 180
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25
• Package Style: ISOPLUS227™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
Notes: 1. Pulse width limited by T
IXYS MOSFETs and IGBTs are covered by one or more
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
(T
Symbol
I
I
V
t
Q
I
of the following U.S. patents:
SM
d(on)
d(off)
f
S
RM
r
rr
fs
thJC
thCK
SD
iss
oss
rss
g(on)
gs
gd
RM
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%.
3. I
V
V
IXFE55N50: I
IXFE50N50: I
V
Repetitive;
pulse width limited by T
I
T
DS
GS
F
Test current:
GS
= I
Test Conditions
Test Conditions
= 0 V, V
V
R
V
I
= 10 V; I
S
F
= 0
GS
GS
G
, V
= 25A, -di/dt = 100 A/µs, V
GS
= 10 V, V
= 1 Ω (External),
= 10 V, V
= 0 V,
DS
D
T
T
= 25 V, f = 1 MHz
= I
= 27.5 A
= 25 A
T
DS
DS
= 0.5 • V
= 0.5 • V
JM.
JM
DSS
DSS
, I
, I
Note 2
D
D
= I
= I
R
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
55N50
50N50
55N50
50N50
= 100 V
Note 2
T
T
Min.
Min.
Characteristic Values
Characteristic Values
9400
1200
1.0
Typ.
Typ.
0.07
10
460
120
330
185
45
45
60
45
55
0.25
Max.
250
220
200
Max.
1.5
55
50
K/W
K/W
µ C
n s
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
A
A
A
A
V
A
S
Please see IXFN55N50 data sheet
for characteristic curves.
ISOPLUS-227 B
IXFE 55N50
IXFE 50N50
6,534,343