IXTN110N20L2 IXYS, IXTN110N20L2 Datasheet - Page 4

• Manufacturer Part Number: IXTN110N20L2
• Description: MOSFET N-CH 200V 100A SOT-227
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTN110N20L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24 mOhm @ 55A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4.5V @ 3mA
• Gate Charge (qg) @ Vgs: 500nC @ 10V
• Input Capacitance (ciss) @ Vds: 23000pF @ 25V
• Power - Max: 735W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 100
• Rds(on), Max, Tj=25°c, (?): 0.024
• Ciss, Typ, (pf): 23000
• Qg, Typ, (nc): 500
• Trr, Typ, (ns): 420
• Pd, (w): 735
• Rthjc, Max, (k/w): 0.17
• Package Style: SOT-227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
160
140
120
100
320
280
240
200
160
120
100
80
60
40
20
80
40
0
0
3.5
0.3
0
0.4
f
4.0
5
= 1 MHz
0.5
0.6
Fig. 9. Forward Voltage Drop of
10
4.5
T
J
Fig. 7. Input Admittance
Fig. 11. Capacitance
0.7
= 125ºC
15
Intrinsic Diode
V
V
V
0.8
T
5.0
GS
SD
J
DS
= 125ºC
- Volts
- Volts
- Volts
- 40ºC
25ºC
0.9
20
T
J
5.5
1.0
= 25ºC
25
1.1
C iss
C oss
C rss
6.0
1.2
30
1.3
6.5
35
1.4
1.5
7.0
40
1.000
0.100
0.010
0.001
140
120
100
80
60
40
20
16
14
12
10
0
8
6
4
2
0
0.00001
0
0
V
I
I
D
G
DS
= 55A
= 10mA
Fig. 12. Maximum Transient Thermal Impedance
= 100V
100
20
0.0001
200
40
Fig. 8. Transconductance
0.001
Fig. 10. Gate Charge
Q
Pulse Width - Seconds
G
300
60
I
- NanoCoulombs
D
- Amperes
IXTN110N20L2
0.01
400
80
100
500
0.1
T
120
J
600
= - 40ºC
25ºC
125ºC
1
140
700
10
160
800