IXFN44N60 IXYS, IXFN44N60 Datasheet - Page 4

• Manufacturer Part Number: IXFN44N60
• Description: MOSFET N-CH 600V 44A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFN44N60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 330nC @ 10V
• Input Capacitance (ciss) @ Vds: 8900pF @ 25V
• Power - Max: 600W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.13 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 44 A
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 44
• Rds(on), Max, Tj=25°c, (?): 0.13
• Ciss, Typ, (pf): 8900
• Qg, Typ, (nc): 330
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 568
• Rthjc, Max, (ºc/w): 0.22
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
Figure 7. Gate Charge
Figure 9. Forward Voltage Drop of the Intrinsic Diode
100
80
60
40
20
12
10
0
8
6
4
2
0
0.2
1.00
0.10
0.01
0.00
0
10
Figure 10. Transient Thermal Resistance
-4
50
V
0.4
DS
I
I
D
G
= 30A
100 150 200 250 300 350 400
= 300V
= 10mA
Gate Charge - nC
T
J
0.6
V
= 125
SD
- Volts
O
C
10
-3
0.8
1.0
T
J
= 25
O
C
Pulse Width - Seconds
10
1.2
-2
10
10000
1000
-1
100
Figure 8. Capacitance Curves
0
5
10
10
0
15
V
DS
- Volts
20
Ciss
25
IXFN 44N60
Crss
Coss
f = 1MHz
30
10
1
35
40
4 - 4