IXTN600N04T2 IXYS, IXTN600N04T2 Datasheet - Page 2

• Manufacturer Part Number: IXTN600N04T2
• Description: MOSFET N-CH 40V 600A SOT-227
• Manufacturer: IXYS
• Series: TrenchT2™ GigaMOS™r
• Type: TrenchT2 GigaMOSr

Specifications of IXTN600N04T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.05 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 600A
• Vgs(th) (max) @ Id: 3.5V @ 250µA
• Gate Charge (qg) @ Vgs: 590nC @ 10V
• Input Capacitance (ciss) @ Vds: 40000pF @ 25V
• Power - Max: 940W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Product: MOSFET Gate Drivers
• Rise Time: 20 ns
• Fall Time: 250 ns
• Supply Current: 200 A
• Maximum Power Dissipation: 940 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Maximum Turn-off Delay Time: 90 ns
• Maximum Turn-on Delay Time: 40 ns
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: Single
• Number Of Outputs: 1
• Output Current: 600 A
• Output Voltage: 40 V
• Vdss, Max, (v): 40
• Id(cont), Tc=25°c, (a): 600
• Rds(on), Max, Tj=25°c, (?): 0.00105
• Ciss, Typ, (pf): 40000
• Qg, Typ, (nc): 590
• Trr, Typ, (ns): 100
• Pd, (w): 940
• Rthjc, Max, (k/w): 0.16
• Package Style: SOT227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
Notes 1. Pulse test, t ≤ 300µs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
GI
thJC
thCS
g(on)
gs
gd
RM
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
2. Includes lead resistance.
Gate Input Resistance
V
V
Resistive Switching Times
V
R
V
V
Repetitive, Pulse Width Limited by T
I
I
-di/dt = 100A/µs
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
GS
R
G
= 100A, V
= 150A, V
= 20V
PRELIMINARY TECHNICAL INFORMATION
= 10V, I
= 0V, V
= 10V, V
= 1Ω (External)
= 10V, V
= 0V
DS
D
GS
GS
DS
DS
= 60A, Note 1
= 25V, f = 1MHz
= 0V, Note 1
= 0V
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 200A
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
DSS
5,237,481
5,381,025
5,486,715
Min.
90
Characteristic Values
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
6400
1470
Typ.
1.32
0.05
150
250
590
127
163
Typ.
40
40
20
90
165
100
3.3
0.16 °C/W
Max.
1800
6,404,065 B1
6,534,343
6,583,505
Max.
600
1.2
°C/W
nC
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B (IXTN) Outline
6,727,585
6,771,478 B2 7,071,537
IXTN600N04T2
(M4 screws (4x) supplied)
7,005,734 B2
7,063,975 B2
7,157,338B2