IXTN320N10T IXYS, IXTN320N10T Datasheet - Page 4

• Manufacturer Part Number: IXTN320N10T
• Description: MOSFET N-CH 100V 320A SOT-227B
• Manufacturer: IXYS

Specifications of IXTN320N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 320A
• Vgs(th) (max) @ Id: 4.5V @ 1mA
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 320
• Rds(on), Max, Tj=25°c, (?): 0.0032
• Ciss, Typ, (pf): 22600
• Qg, Typ, (nc): 375
• Trr, Typ, (ns): 100
• Trr, Max, (ns): -
• Pd, (w): 680
• Rthjc, Max, (k/w): 0.22
• Package Style: SOT227
• Power - Max: -
• Gate Charge (qg) @ Vgs: -
• Rds On (max) @ Id, Vgs: -
• Other names: IXTH320N10T; Q3347867

IXYS reserves the right to change limits, test conditions, and dimensions.
280
240
200
160
120
10
1.00
0.10
0.01
0.00
80
40
9
8
7
6
5
4
3
2
1
0
0
0.00001
0
0
V
I
I
40
20
D
G
DS
= 160A
= 10mA
= 50V
80
40
Fig. 7. Transconductance
120
60
Fig. 9. Gate Charge
Q
0.0001
G
160
80
I
- NanoCoulombs
D
- Amperes
200
100
T
J
= - 40ºC
240
120
25ºC
150ºC
280
140
Fig. 11. Maximum Transient Thermal Impedance
0.001
320
160
360
180
Pulse Width - Seconds
400
200
0.01
100,000
10,000
1,000
280
240
200
160
120
100
80
40
0
0.2
0
f
0.3
= 1 MHz
5
Fig. 8. Forward Voltage Drop of
0.4
10
0.1
Fig. 10. Capacitance
T
0.5
J
= 150ºC
Intrinsic Diode
15
V
V
0.6
SD
DS
- Volts
20
- Volts
IXTN320N10T
0.7
25
1
0.8
C iss
C oss
C rss
T
J
30
0.9
= 25ºC
35
1.0
1.1
10
40