IXFN102N30P IXYS, IXFN102N30P Datasheet - Page 2

• Manufacturer Part Number: IXFN102N30P
• Description: MOSFET N-CH 300V 88A SOT227B
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFN102N30P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 33 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 88A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 224nC @ 10V
• Input Capacitance (ciss) @ Vds: 7500pF @ 25V
• Power - Max: 600W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.033 Ohms
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 88 A
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 86
• Rds(on), Max, Tj=25°c, (?): 0.033
• Ciss, Typ, (pf): 7500
• Qg, Typ, (nc): 224
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 570
• Rthjc, Max, (ºc/w): 0.22
• Package Style: SOT-227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Notes:
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
S
SM
RM
d(on)
r
d(off)
f
rr
one or moreof the following U.S. patents:
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
The product presented herein is under development. The Technical Specifications offered
are derived from data gathered during objective characterizations of preliminary engineer-
ing lots; but also may yet contain some information supplied during a pre-production
design evaluation. IXYS reserves the right to change limits, test conditions, and dimen-
sions without notice.
1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
V
V
V
R
V
Test Conditions
V
Repetitive
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= I
= 25 A, -di/dt = 100 A/µs
PRELIMINARY TECHNICAL INFORMATION
= 100 V, V
= 20 V; I
= 3.3 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
S
, V
GS
= 0 V, Note 1
D
DS
DS
= 0.5 I
DS
GS
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
4,850,072
4,881,106
= 0 V
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 I
= 60 A
(T
(T
J
J
5,049,961
5,063,307
5,187,117
= 25° C unless otherwise specified)
= 25° C unless otherwise specified)
D25
Min.
Min.
5,237,481
5,381,025
5,486,715
45
Characteristic Values
Characteristic Values
7500
1150
Typ.
Typ.
0.05
230
130
224
110
0.8
57
30
28
30
50
6,162,665
6,259,123 B1
6,306,728 B1
6
0.21 °C/W
Max.
Max.
102
250
200
1.5
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
A
V
SOT-227B Outline
6,710,463
6,683,344
6,710,405B2
IXFN102N30P
6,727,585
6,759,692
6,771,478 B2