IXTN46N50L IXYS, IXTN46N50L Datasheet - Page 2

• Manufacturer Part Number: IXTN46N50L
• Description: MOSFET N-CH 500V 46A SOT-227B
• Manufacturer: IXYS

Specifications of IXTN46N50L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 500mA, 20V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 6V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 15V
• Input Capacitance (ciss) @ Vds: 7000pF @ 25V
• Power - Max: 700W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 46 A
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 46
• Rds(on), Max, Tj=25°c, (?): 0.16
• Ciss, Typ, (pf): 7000
• Qg, Typ, (nc): 260
• Trr, Typ, (ns): 600
• Pd, (w): 700
• Rthjc, Max, (k/w): 0.18
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Safe Operating Area Specification
Symbol
SOA
Source-Drain Diode
Symbol
I
I
V
t
Note 1: Pulse test, t < 300 μs, duty cycle, d ≤ 2 %
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
d(on)
r
d(off)
f
S
SM
rr
fs
iss
oss
rss
thJC
thCS
SD
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
g(on)
gs
gd
Test Conditions
V
Test Conditions
V
Test Conditions
V
Repetitive; pulse width limited by T
I
Note 1
I
F
F
PRELIMINARY TECHNICAL INFORMATION
DS
DS
GS
= I
= I
= 400 V, I
= 0 V
= 10 V; I
V
V
R
V
S
S
, V
, -dt/dt = 100 A/μs, V
GS
GS
GS
G
GS
= 0 V, V
= 15 V, V
= 2 Ω (External),
= 15 V, V
= 0 V,
D
D
= 0.5 • I
= 0.6 A, T
4,835,592
4,881,106
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
4,931,844
5,017,508
5,034,796
, Note 1
C
R
= 90°C
= 100 V
(T
(T
DSS
DSS
J
J
, I
, I
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
5,049,961
5,063,307
5,187,117
JM
D
D
= 0.5 • I
= 0.5 • I
5,237,481
5,381,025
5,486,715
Min.
Min.
Min.
D25
D25
240
Characteristic Values
7
Characteristic Values
7000
Typ.
Typ. Max.
Typ. Max.
0.05
600
900
170
260
125
6,162,665
6,259,123 B1
6,306,728 B1
10
40
50
80
42
85
0.18 °C/W
Max.
13
100
1.5
46
°C/W
6,404,065 B1
6,534,343
6,583,505
W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
SOT-227B (IXTN) Outline
6,683,344
6,710,405 B2 6,759,692
6,710,463
(M4 screws (4x) supplied)
6,727,585
6,771,478 B2 7,071,537
IXTN46N50L
7,005,734 B2
7,063,975 B2
7,157,338B2