IXFN120N20 IXYS, IXFN120N20 Datasheet - Page 2

MOSFET N-CH 200V 120A SOT-227B

IXFN120N20

Manufacturer Part Number
IXFN120N20
Description
MOSFET N-CH 200V 120A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFN120N20

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
17 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
360nC @ 10V
Input Capacitance (ciss) @ Vds
9100pF @ 25V
Power - Max
600W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.017 Ohms
Forward Transconductance Gfs (max / Min)
77 s
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
600 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
120
Rds(on), Max, Tj=25°c, (?)
0.017
Ciss, Typ, (pf)
9100
Qg, Typ, (nc)
360
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
568
Rthjc, Max, (ºc/w)
0.22
Package Style
SOT-227B
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN120N20
Manufacturer:
TOSHIBA
Quantity:
2 000
Part Number:
IXFN120N20P
Manufacturer:
MICROCHIP
Quantity:
2 000
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
Note: 1. Pulse test, t
RM
d(on)
d(off)
S
SM
r
f
rr
fs
oss
thJC
thCK
SD
iss
rss
g(on)
gs
gd
RM
Test Conditions
V
Test Conditions
V
Repetitive;
pulse width limited by T
I
F
DS
GS
= I
I
F
S
= 0 V
= 10 V; I
V
V
R
V
= 50A,-di/dt = 100 A/ s, V
, V
GS
GS
GS
G
= 1
GS
= 0 V, V
= 10 V, V
= 10 V, V
300 s, duty cycle d
= 0 V, Note 1
D
(External),
= 0.5 • I
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
JM
DSS
DSS
Note 1
(T
(T
R
J
J
, I
, I
= 100 V
= 25 C, unless otherwise specified)
= 25 C, unless otherwise specified)
2 %
D
D
= 0.5 • I
= 0.5 • I
D25
D25
min.
min.
40
Characteristic Values
Characteristic Values
4,835,592
4,850,072
9100
2200
1000
0.05
typ.
typ.
110
360
160
1.1
13
77
42
55
40
50
4,881,106
4,931,844
0.22
max.
max.
120
480
250
1.5
K/W
K/W
5,017,508
5,034,796
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
n s
C
S
A
A
V
A
miniBLOC, SOT-227 B
5,049,961
5,063,307
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
31.50
14.91
30.12
38.00
11.68
12.60
25.15
26.54
24.59
-0.05
Min.
7.80
4.09
4.09
4.09
8.92
0.76
1.98
4.95
3.94
4.72
IXFN 120N20
Millimeter
5,187,117
5,237,481
31.88
15.11
30.30
38.23
12.22
12.85
25.42
26.90
25.07
Max.
8.20
4.29
4.29
4.29
9.60
0.84
2.13
5.97
4.42
4.85
0.1
5,486,715
5,381,025
-0.002
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.496
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
Min.
Inches
6,306,728B1
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
Max.

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