IXFN48N50 IXYS, IXFN48N50 Datasheet - Page 4

• Manufacturer Part Number: IXFN48N50
• Description: MOSFET N-CH 500V 48A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFN48N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 4V @ 8mA
• Gate Charge (qg) @ Vgs: 270nC @ 10V
• Input Capacitance (ciss) @ Vds: 8400pF @ 25V
• Power - Max: 520W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Forward Transconductance Gfs (max / Min): 42 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 48 A
• Power Dissipation: 520 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 48
• Rds(on), Max, Tj=25°c, (?): 0.10
• Ciss, Typ, (pf): 8400
• Qg, Typ, (nc): 270
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 521
• Rthjc, Max, (ºc/w): 0.24
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.01
100
0.1
10
90
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20
10
0.001
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8
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0.00
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Fig.7 Gate Charge Characteristic Curve
Fig.9 Source Current vs. Source
Fig.10 Transient Thermal Impedance
V
I
I
D
G
DS
= 24A
= 10mA
= 250V
50
0.25
to Drain Voltage
Gate Charge - nCoulombs
100 150 200 250 300 350 400
0.50
T
V
J
= 125°C
SD
0.75
- Volt
1.00
T
J
= 25°C
1.25
0.01
1.50
Time - Seconds
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
Fig.8 Capacitance Curves
0
0.1
5
10
V
f = 1 MHz
V
DS
DS
IXFN / IXFK 44N50
IXFN / IXFK 48N50
- Volts
= 25V
15
C
C
C
iss
oss
rss
20
C1 - 187
25
1