IXFN80N50P IXYS, IXFN80N50P Datasheet - Page 4

• Manufacturer Part Number: IXFN80N50P
• Description: MOSFET N-CH 500V 66A SOT-227
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFN80N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 66A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 195nC @ 10V
• Input Capacitance (ciss) @ Vds: 12700pF @ 25V
• Power - Max: 700W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Forward Transconductance Gfs (max / Min): 70 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 66 A
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 66
• Rds(on), Max, Tj=25°c, (?): 0.065
• Ciss, Typ, (pf): 12700
• Qg, Typ, (nc): 195
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 700
• Rthjc, Max, (ºc/w): 0.18
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100000
10000
140
120
100
250
200
150
100
1000
80
60
40
20
50
100
0
0
10
0.4
4
0
T
J
f = 1MHz
4.5
= 125
0.6
5
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
T
Fig. 9. Source Current vs.
Source-To-Drain Voltage
J
°
= 125
10
C
5
-40
25
0.8
°
°
°
V
V
C
C
C
15
G S
V
S D
5.5
D S
- Volts
T
- Volts
J
1
20
- Volts
= 25
6
°
25
C
1.2
6.5
30
1.4
C iss
C oss
C rss
7
35
1.6
7.5
40
1000
140
120
100
100
80
60
40
20
10
10
0
9
8
7
6
5
4
3
2
1
0
1
10
0
0
T
J
R
T
T
= -40
20
J
C
V
I
I
DS(on)
125
D
G
DS
= 150
25
20
= 25
Fig. 8. Transconductance
= 40A
= 10mA
°
°
°
40
C
= 250V
C
C
Fig. 10. Gate Charge
°
Limit
°
Fig. 12. Forw ard-Bias
C
Safe Operating Area
C
40
60
Q
G
I
D
- NanoCoulombs
80
V
60
- Amperes
D S
DC
100 120 140 160 180 200
100
- Volts
80
IXFN 80N50P
100
120
100µs
1ms
25µs
10ms
1000
140