IXFN180N25T IXYS, IXFN180N25T Datasheet - Page 3

• Manufacturer Part Number: IXFN180N25T
• Description: MOSFET N-CH 155A 250V SOT-227
• Manufacturer: IXYS
• Series: GigaMOS™r

Specifications of IXFN180N25T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12.9 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 164A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 345nC @ 10V
• Input Capacitance (ciss) @ Vds: 28000pF @ 25V
• Power - Max: 900W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 164
• Rds(on), Max, Tj=25°c, (?): 0.0129
• Ciss, Typ, (pf): 28000
• Qg, Typ, (nc): 345
• Trr, Typ, (ns): -
• Trr, Max, (ns): -
• Pd, (w): 900
• Rthjc, Max, (k/w): 0.138
• Package Style: SOT-227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All Rights Reserved
180
160
140
120
100
180
160
140
120
100
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
80
60
40
20
0
0
0.0
0.0
0
Fig. 5. R
0.4
V
0.2
GS
50
= 10V
0.4
0.8
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
DS(on)
0.6
1.2
100
vs. Drain Current
1.6
0.8
Normalized to I
I
D
150
V
V
@ 25ºC
@ 125ºC
- Amperes
2.0
1.0
DS
DS
- Volts
- Volts
1.2
2.4
V
200
GS
V
= 10V
1.4
GS
2.8
6V
5V
8V
7V
= 10V
D
250
7V
1.6
3.2
= 90A Value
6V
5V
T
T
J
J
= 125ºC
= 25ºC
1.8
3.6
300
2.0
4.0
350
2.2
4.4
180
160
140
120
100
80
60
40
20
350
300
250
200
150
100
0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
50
-50
0
-50
0
V
Fig. 4. R
GS
V
-25
Fig. 2. Extended Output Characteristics
GS
= 10V
2
-25
Fig. 6. Maximum Drain Current vs.
= 10V
4
DS(on)
0
vs. Junction Temperature
7V
6V
5V
T
0
C
Case Temperature
- Degrees Centigrade
T
6
J
Normalized to I
25
- Degrees Centigrade
25
V
@ 25ºC
DS
8
50
50
- Volts
IXFN180N25T
10
I
D
75
75
= 180A
12
D
= 90A Value
100
100
14
I
D
= 90A
125
125
16
150
150
18