VDI75-06P1 IXYS, VDI75-06P1 Datasheet
VDI75-06P1
Specifications of VDI75-06P1
Related parts for VDI75-06P1
VDI75-06P1 Summary of contents
Page 1
... E off MHz ies (per IGBT) thJC R with heatsink compound (0.42 K/m.K; 50 µm) thJH IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved VID L9 NTC X15 L9 T16 NTC X16 F1 Maximum Ratings 600 ± 125°C ...
Page 2
... Strike distance in air (Pin to heatsink) A Weight Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved Maximum Ratings 56 35 Characteristic Values min. ...
Page 3
... Fig. 3 Typ. transfer characteristics 300 Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 150 120 I C 11V = 25°C 9V 42T60 42T60 42T60 120 nC 160 Q G VDI 75-06P1 VII 75-06P1 ...
Page 4
... Fig. 9 Typ. turn on energy and switching 120 Ω 125° 100 200 300 400 Fig. 11 Reverse biased safe operating area IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 100 t d(on off 300 ± Ω R ...