MKI75-12E8 IXYS, MKI75-12E8 Datasheet - Page 4

• Manufacturer Part Number: MKI75-12E8
• Description: MOD IGBT H-BRIDGE 1200V 130A E3
• Manufacturer: IXYS

Specifications of MKI75-12E8

• Igbt Type: NPT
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 75A
• Current - Collector (ic) (max): 130A
• Current - Collector Cutoff (max): 1.1mA
• Input Capacitance (cies) @ Vce: 5.7nF @ 25V
• Power - Max: 500W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: E3
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 130
• Ic80, Tc = 80°c, Igbt, (a): 90
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.0
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 7.5
• Rthjc, Max, Igbt, (k/w): 0.25
• If25, Tc = 25°c, Diode, (a): 150
• If80, Tc = 80°c, Diode, (a): 100
• Rthjc, Max, Diode, (k/w): 0.41
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
E
E
I
CM
on
on
160
140
120
100
mJ
A
80
60
40
20
30
20
10
mJ
40
30
20
10
0
0
0
0
0
0
E on
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy and switching
Fig. 11 Reverse biased safe operating area
V
V
I
T
C
VJ
CE
GE
E on
200
= 600 V
= ±15 V
= 75 A
= 125°C
20
V
V
R
T
times versus collector current
times versus gate resistor
RBSOA
CE
GE
VJ
G
40
400
= 15 Ω
= 600 V
= ±15 V
= 125°C
R
T
VJ
G
= 15 Ω
600
= 125°C
40
80
800 1000 1200 1400
R
60
I
G
C
120
t d(on)
V
CE
80
A
t d(on)
t r
t r
Ω
160
300
200
100
0
ns
200
150
100
50
0
ns
V
t
t
E
E
Z
0.0001
off
thJC
off
0.001
0.01
K/W
0.1
mJ
mJ
16
12
20
15
10
0.0001
8
4
0
1
5
0
0
0
Fig. 8 Typ. turn off energy and switching
Fig.10 Typ. turn off energy and switching
Fig. 12 Typ. transient thermal impedance
E
E
off
off
V
V
R
T
V
V
I
T
C
CE
GE
VJ
G
CE
GE
VJ
0.001
= 600 V
= ±15 V
= 15 Ω
= 125°C
= 600 V
= ±15 V
= 75 A
= 125°C
times versus collector current
times versus gate resistor
20
40
single pulse
0.01
40
80
0.1
R
MWI 75-12 E8
MKI 75-12 E8
60
G
I
C
120
t
1
A
80
MWI75-12E8
diode
t
IGBT
d(off)
t
s
d(off)
t
f
t
160
f
Ω
10
20070912a
800
600
400
200
0
ns
2000
1500
1000
500
0
ns
4 - 4
t
t