IXEN60N120 IXYS, IXEN60N120 Datasheet - Page 4
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IXEN60N120
Manufacturer Part Number
IXEN60N120
Description
IGBT NPT3 1200V 100A SOT-227B
Manufacturer
IXYS
Datasheet
1.IXEN60N120D1.pdf
(4 pages)
Specifications of IXEN60N120
Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 60A
Current - Collector (ic) (max)
100A
Current - Collector Cutoff (max)
800µA
Input Capacitance (cies) @ Vce
3.8nF @ 25V
Power - Max
445W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
100A
Gate To Emitter Voltage (max)
±20V
Package Type
SOT-227B
Pin Count
4
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
100
Ic90, Tc=90°c, Igbt, (a)
65
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.7
Tfi, Typ, Igbt, (ns)
30
Eoff, Typ, Tj=125°c, Igbt, (mj)
4.8
Rthjc, Max, Igbt, (°c/w)
0.28
If, Tc=90°c, Diode, (a)
-
Rthjc, Max, Diode, (k/w)
-
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2003 IXYS All rights reserved
E
E
I
CM
on
on
15.0
12.5
10.0
120
100
mJ
20
16
12
mJ
7.5
5.0
2.5
0.0
80
60
40
20
A
8
4
0
0
0
0
0
Fig. 7
Fig. 9
Fig. 11
R
T
V
V
I
T
VJ
G
C
VJ
CE
GE
E on
= 22 Ω
= 125°C
200
E on
= 600 V
= ±15 V
20
= 50 A
= 125°C
20
Typ. turn on energy and switching
times versus collector current
Typ. turn on energy and switching
times versus gate resistor
Reverse biased safe operating area
RBSOA
400
40
40
600
60
60
800 1000 1200 1400
R
V
V
R
T
80
80
VJ
CE
GE
I
G
G
C
= 22 Ω
= 600 V
= ±15 V
= 125°C
100
V
100
CE
t d(on)
t r
t r
t d(on)
A
Ω
120
120
100
90
80
70
60
50
40
30
20
10
0
ns
300
250
200
150
100
50
0
ns
V
t
t
Z
E
E
0.0001
thJC
off
off
0.001
0.01
K/W
0.1
mJ
0.00001 0.0001 0.001
mJ
12
10
8
6
4
2
0
8
6
4
2
0
1
0
Fig. 8 Typ. turn off energy and switching
Fig.10 Typ. turn off energy and switching
Fig. 12 Typ. transient thermal impedance
E off
V
V
I
T
C
VJ
CE
GE
20
E off
= 600 V
= ±15 V
= 50 A
= 125°C
20
times versus collector current
times versus gate resistor
40
40
single pulse
0.01
60
60
IXEN 60N120
IXEN 60N120D1
diode
R
V
V
R
T
0.1
80
VJ
G
CE
GE
G
80
I
C
= 22 Ω
= 600 V
= ±15 V
= 125°C
t
100
1
t d(off)
t f
100
IXEN60N120
IGBT
t d(off)
t f
Ω
s
120
A
10
800
600
400
200
0
ns
1200
1000
800
600
400
200
0
ns
4 - 4
t
t