GA200SA60S Vishay, GA200SA60S Datasheet - Page 5

• Manufacturer Part Number: GA200SA60S
• Description: IGBT STD 600V 100A SOT227
• Manufacturer: Vishay

Specifications of GA200SA60S

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.3V @ 15V, 100A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 16.25nF @ 30V
• Power - Max: 630W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Other names: *GA200SA60S; VS-GA200SA60S; VS-GA200SA60S; VSGA200SA60S; VSGA200SA60S

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Fig. 9 - Typical Switching Losses vs. Gate
30000
24000
18000
12000
25
24
23
22
21
20
19
18
6000
0
0

V
V
T
Fig. 7 - Typical Capacitance vs.
I
J
C
1
CC
GE
= 480V
= 15V
= 25
= 200A

R
C ies
C oes
C res
10
V
Collector-to-Emitter Voltage
G


CE
°
, Gate Resistance (Ohm)
C

V
C
C
C
, Collector-to-Emitter Voltage (V)
Resistance
GE
ies
res
oes
=
=
=
=
20
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
( Ω )
40
SHORTED
50
100
1000
100
20
16
12
10
8
4
0
Fig. 10 - Typical Switching Losses vs.
-60 -40 -20
0


R
R
V
V
V
I
GE
CC
G
CC
C
G
Fig. 8 - Typical Gate Charge vs.
= 2.0
= 480V
= 400V
= 110A
= Ohm
= 15V
100A
T , Junction Temperature ( C )
Junction Temperature
Q , Total Gate Charge (nC)
J
Ω
200
G
0
Gate-to-Emitter Voltage
GA200SA60S
20
40
400
60
80 100 120 140 160
600

I =

I =

I =
C
C
C
°
350A
400
200
100
A
A
A
5
800