GA400TD60U Vishay, GA400TD60U Datasheet - Page 6

• Manufacturer Part Number: GA400TD60U
• Description: IGBT FAST 600V 400A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA400TD60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 400A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 2mA
• Input Capacitance (cies) @ Vce: 40.136nF @ 30V
• Power - Max: 1250W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

GA400TD60U
200
160
120
1000
Fig. 13 - Typical Forward Voltage Drop vs.
6
80
40
100
Fig. 11 - Typical Switching Losses vs.
0
10
0
0.0

R
T
V
V
R
CC
GE
G
J
G1
Fo rw ard V o lta g e D ro p - V
Instantaneous Forward Current
Collector-to-Emitter Current
I
=15 ;R
= 125 C
= 360V
= 15V
C
= Ohm
, Collector-to-emitter Current (A)
200
°
2.0
G2
= 0
T = 125°C
T = 25°C
J
J
400
4.0
FM
(V )
600
6.0
800
3 0 0 0 0
2 0 0 0 0
1 0 0 0 0
1 0 0 0
Fig. 14 - Typical Stored Charge vs. di
8 0 0
6 0 0
4 0 0
2 0 0
0
5 0 0
0
0
V
T
V
G E
J
CE
V
I = 4 00 A
I = 80 0A
I = 200 A
Fig. 12 - Reverse Bias SOA
F
SAFE O PERATING AREA
F
F
CE
= 20V
= 125°C
measured at terminal (Peak Voltage)
, Collector-to-E mitter Voltage (V)
2 0 0
1 0 0 0
di
f
/dt - (A/µs)
4 0 0
V = 3 6 0 V
T = 1 2 5 ° C
T = 2 5 °C
R
J
J
1 5 0 0
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6 0 0
f
/dt
2 0 0 0
8 0 0
A