GA300TD60U Vishay, GA300TD60U Datasheet - Page 5

• Manufacturer Part Number: GA300TD60U
• Description: IGBT FAST 600V 300A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA300TD60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 300A
• Current - Collector (ic) (max): 300A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 27.755nF @ 30V
• Power - Max: 880W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

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Fig. 9 - Typical Switching Losses vs. Gate
50000
40000
30000
20000
10000
70
60
50
40
30
0
0

Fig. 7 - Typical Capacitance vs.
V
V
T
I
1
J
C
CC
GE
Collector-to-Emitter Voltage
= 125 C
= 360V
= 15V
= 300A
V
125°C
R
10
R
CE
G
G

V
C
C
C
°
, Gate Resistance (Ohm)
, Collector-to-Emitter Voltage (V)
, Gate Resistance
Resistance
GE
ies
res
oes
=
=
=
=

C
C
C
20
0V,
C
C
C

oes
ies

res
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
SHORTED
40
100
50
1000
100
10
20
16
12
8
4
0
Fig. 10 - Typical Switching Losses vs.
-60 -40 -20
0


R
R
V
V
V
I
Fig. 8 - Typical Gate Charge vs.
GE
CC
G1
CC
C
G
=27 ;R
200
= 400V
= 187A
= 15V
= 360V
= Ohm
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
Junction Temperature
Q , Total Gate Charge (nC)
J
G
400
G2
0
GA300TD60U
= 0
20
600
40
60
800
80 100 120 140 160
1000

I =

I =

I =
C
C
C
°
1200
600
300
150
A
A
A
1400
5