GA200TS60U Vishay, GA200TS60U Datasheet - Page 2

• Manufacturer Part Number: GA200TS60U
• Description: IGBT FAST 600V 200A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA200TS60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 20.068nF @ 30V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Not Compliant

GA200TS60U
Electrical Characteristics @ T
Dynamic Characteristics - T
V
V
V
g
I
V
I
Q
Q
Q
t
t
t
t
E
E
E
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
rr
rr
fe
V
on
(BR)CES
CE(on)
GE(th)
FM
off (1)
ts (1)
ies
oes
res
ge
gc
(rec)
g
rr
2
GE(th)
M
/dt
/ T
J
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage —
Forward Transconductance T
Collector-to-Emitter Leaking Current
Diode Forward Voltage - Maximum
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
= 125°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
— 20068 —
—
—
—
—
— 10714 —
—
1254
1922
175
903 1355
125
306
342
194
366
213
261
179
120
-11
1.8
1.9
3.7
3.7
—
—
—
—
—
12
16
28
250
188
459
2.2
6.0
1.0
—
—
—
—
10
—
—
39
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
A/µs
mA
nA
mJ
nC
µC
ns
pF
ns
V
S
V
A
V
V
V
I
V
V
V
I
I
V
V
I
T
R
I
V
V
V
V
ƒ = 1 MHz
I
R
R
V
di/dt 1300A/µs
C
F
F
C
C
C
J
GE
GE
GE
CE
CE
GE
GE
GE
CC
CC =
GE
GE
CC
CC =
G1
G1
G2
= 200A, V
= 200A, V
= 1.25mA
= 135A
= 200A
= 200A
= 25°C
= V
= 25V, I
= 0V, V
= ±20V
= 27 , R
= 27
= 0
= 0V, I
= 15V, I
= 15V, I
= 0V, V
= 400V, V
= ±15V
= 0V
= 30V
360V
360V
GE
, I
C
CE
CE
C
GE
C
C
C
GE
= 1mA
Conditions
G2
Conditions
= 1.25mA
= 200A
= 200A
= 200A, T
GE
= 600V
= 600V, T
= 0V, T
= 0V
= 0
= 15V
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J
= 125°C
J
J
= 125°C
= 125°C