CPV364M4F Vishay, CPV364M4F Datasheet - Page 4

• Manufacturer Part Number: CPV364M4F
• Description: IGBT SIP MODULE 600V 15A IMS-2
• Manufacturer: Vishay

Specifications of CPV364M4F

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.6V @ 15V, 27A
• Current - Collector (ic) (max): 27A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 2.2nF @ 30V
• Power - Max: 63W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Not Compliant
• Other names: *CPV364M4F; VS-CPV364M4F; VS-CPV364M4F; VSCPV364M4F; VSCPV364M4F

CPV364M4F
Fig. 4 - Maximum Collector Current vs. Case
0.01
30
25
20
15
10
0 .1
10
0.0000 1
5
0
1
25
D = 0.50
0.02
0.01
0.20
0.10
0.05
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
T , Case Temperature (
C
Temperature
(T HERMA L RE SPO NS E)
0.000 1
75
S ING LE P ULS E
100
t , R e c ta ng ula r P u ls e D ur at io n (se c)
°
0 .00 1
1
125
C)
150
0.01
Fig. 5 - Typical Collector-to-Emitter Voltage
3.0
2.0
1.0
-60 -40 -20
V
80 us PULSE WIDTH
GE
vs. Junction Temperature
= 15V
N otes:
1 . D uty fac tor D = t
2. P eak T = P
T , Junction Temperature ( C)
0.1
J
0
20
J
40
D M
x Z
60 80 100 120 140 160
1
/ t
thJ C
2
P
1
D M
+ T
C
t
I =
I =
I =
1
C
C
C
t
2
°
7.5
30
15
A
A
A
10