MIO1200-33E11 IXYS, MIO1200-33E11 Datasheet - Page 2

• Manufacturer Part Number: MIO1200-33E11
• Description: IGBT MODULE SGL 1200A E11
• Manufacturer: IXYS

Specifications of MIO1200-33E11

• Igbt Type: NPT
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (max): 3300V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 1200A
• Current - Collector (ic) (max): 1200A
• Current - Collector Cutoff (max): 120mA
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: E11
• Channel Type: N
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vces, (v): 3300
• Ic25, Tc = 25°c, Igbt, (a): 1650
• Ic80, Tc = 80°c, Igbt, (a): 1200
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 3.1
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 2000
• Rthjc, Max, Igbt, (k/w): 0.0085
• If25, Tc = 25°c, Diode, (a): -
• If80, Tc = 80°c, Diode, (a): 1200
• Rthjc, Max, Diode, (k/w): 0.017
• Package Style: E11
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Input Capacitance (cies) @ Vce: -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

Symbol
I
I
Symbol
V
I
t
Q
E
R
② Forward voltage is given at chip level
Symbol
T
T
T
M
Symbol
d
d
V
V
CTI
L
R
R
Weight
*
2 - 3
Diode
F80
FSM
RM
Module
rr
)
JM
VJ
stg
A
S
σ σ σ σ σ
F
rec
ISOL
E
thJC
term-chip
thCH
RR
d
V = V
②
CE(sat)
*
+ R
Conditions
T
V
Conditions
I
V
V
Inductive load; L
Conditions
max junction temperature
Operatingtemperature
Storage temperature
Mounting torque
Conditions
Clearance distance
Surface creepage
distance
1 min, f = 50 Hz
Partial discharge extinction voltage
f = 50 Hz, Q
Comperative tracking index
Module stray inductance, C to E terminal
Resistance terminal to chip
per module;
F
term-chip
C
R
CC
GE
= 1200 A;
= 80°C
= 0 V; T
= 1800 V; I
= ± 15 V; R
· I
C
resp. V = V
VJ
PD
λ
= 125°C; t
grease = 1
≤ 10pC
T
T
G
C
VJ
VJ
= 1 Ω; T
σ
= 1200 A;
= 100nH
= 25°C
= 125°C
Main terminals, M8 screws
Base-heatsink, M6 screws
F
+ R
p
terminal to base
terminal to terminal
terminal to base
terminal to terminal
term-chip
VJ
= 10 ms; half-sinewave
W/m•K
= 125°C
· I
Advanced Technical Information
F
10500
5100
min.
min.
600
Characteristic Values
Characteristic Values
26
26
56
56
-40...+125
-40...+125
Maximum Ratings
Maximum Ratings
1680
1320
1740
2.30
2.35
0.006
800
1500
12000
typ.
0.12
8 - 10
typ. max.
1200
+125
4 - 6
18
0.017 K/W
max.
K/W
Nm
Nm
mm
mm
mm
mm
m
°C
°C
°C
mJ
µC
V~
nH
ns
A
A
Ω
V
V
A
V
g
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MIO 1200-33E11