MIO600-65E11 IXYS, MIO600-65E11 Datasheet - Page 5

• Manufacturer Part Number: MIO600-65E11
• Description: IGBT MODULE SGL 600A E11
• Manufacturer: IXYS

Specifications of MIO600-65E11

• Igbt Type: NPT
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (max): 6500V
• Vce(on) (max) @ Vge, Ic: 4.2V @ 15V, 600A
• Current - Collector (ic) (max): 600A
• Current - Collector Cutoff (max): 120mA
• Input Capacitance (cies) @ Vce: 150nF @ 25V
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: E11
• Vces, (v): 6500
• Ic25, Tc = 25°c, Igbt, (a): 840
• Ic80, Tc = 80°c, Igbt, (a): 600
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 4.2
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 3250
• Rthjc, Max, Igbt, (k/w): 0.011
• If25, Tc = 25°c, Diode, (a): -
• If80, Tc = 80°c, Diode, (a): 600
• Rthjc, Max, Diode, (k/w): 0.021
• Package Style: E11
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -

Outline drawing
© 2011 IXYS All rights reserved
3000
2500
2000
1500
1000
1400
1200
1000
500
800
600
400
200
0
0
0
0
Fig. 13 Typ. reverse recovery characteristics
Fig. 15 Safe operating area diode (SOA)
V
R
T
L
σ
CC
vj
G
= 280 nH
= 125 °C
1000 2000 3000 4000 5000 6000 7000
= 3.9 ohm
= 3600 V
300
E
versus forward current
rec
[mJ] = -1.8 x 10
600
V
I
F
R
[A]
[V]
-3
x I
V
di/dt ≤ 4000 A/µs
T
L
σ
F
CC
vj
900
2
≤ 280 nH
= 125 °C
+ 3.93 x I
≤ 4400 V
E
Q
I
F
rr
rec
1200
rr
+ 403
0.0001
2500
2000
1500
1000
0.001
500
0.01
0.1
0
0.001
0
Fig. 14 Typ. reverse recovery characteristics
Fig. 16 Thermal impedance vs. time
E
Q
rec
I
rr
rr
1
0.01
versus di/dt
di/dt [kA/µs]
Z
IGBT
DIODE
Z
th
th(j-c)
- (j
2
c)
(t)
t [s]
Diode
0.1
=
∑
Z
i
=
n
V
I
T
L
1
F
th(j-c)
σ
CC
vj
R
= 600 A
= 280 nH
= 125 °C
R
t
R
t
i
3
i
i
= 3600 V
(1
IGBT
i
i
e -
MIO 600-65E11
[K/kW]
[ms]
[K/kW]
[ms]
i
1
t/ -
τ
i
)
4
1200
1000
800
600
400
200
0
10
151
144
8.5
17
1
20110119a
5.84
5.83
4.2
2
2
5 - 5