MIO1200-33E10 IXYS, MIO1200-33E10 Datasheet - Page 3

• Manufacturer Part Number: MIO1200-33E10
• Description: MOD IGBT SGL SWITCH 3300V E10
• Manufacturer: IXYS

Specifications of MIO1200-33E10

• Igbt Type: NPT
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (max): 3300V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 1200A
• Current - Collector (ic) (max): 1200A
• Current - Collector Cutoff (max): 120mA
• Input Capacitance (cies) @ Vce: 187nF @ 25V
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: E10
• Channel Type: N
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vces, (v): 3300
• Ic25, Tc = 25°c, Igbt, (a): 1650
• Ic80, Tc = 80°c, Igbt, (a): 1200
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 3.1
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 1950
• Rthjc, Max, Igbt, (k/w): 0.0085
• If25, Tc = 25°c, Diode, (a): -
• If80, Tc = 80°c, Diode, (a): 1200
• Rthjc, Max, Diode, (k/w): 0.017
• Package Style: E10
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

Fig. 1 Typical output characteristics, chip level
Fig. 3 Typical onstate characteristics, chip level
Fig. 5 Typical gate charge characteristics
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2400
2000
1600
1200
2400
2000
1600
1200
20
15
10
800
400
800
400
5
0
0
0
0
0
0
1
2
1
1
3
9 V
4
2
5
2
Q
17 V
15 V
13 V
11 V
V
g
V
V
CC
6
CE
CE
[µC]
3
25 °C
= 1800
[V]
[V]
7
3
8
V
4
CC
I
T
C
vj
9
= 2500
= 1200 A
125 °C
= 25 °C
V
GE
4
10 11 12
5
= 15 V
5
6
Fig. 2 Typical output characteristics, chip level
Fig. 6 Typical capacitances vs
Fig. 4 Typical transfer characteristics, chip level
collector-emitter voltage
1000
100
2400
2000
1600
1200
10
2400
2000
1600
1200
1
800
400
800
400
0
0
0
0
0
V
1
CE
5
= 20V
1
2
10
3
9 V
C
C
C
2
ies
oes
res
4
17 V
15 V
13 V
11 V
15
5
V
3
CE
V
MIO 1200-33E10
V
6
GE
F
[V]
[V]
[V]
20
7
125°C
4
8
25
V
f
V
9 10 11 12 13
OSC
5
GE
OSC
T
25°C
vj
= 0 V
= 1 MHz
= 50 mV
= 125 °C
30
6
35
7
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