MIO1800-17E10 IXYS, MIO1800-17E10 Datasheet - Page 3

• Manufacturer Part Number: MIO1800-17E10
• Description: MOD IGBT SGL SWITCH 1700V E10
• Manufacturer: IXYS

Specifications of MIO1800-17E10

• Igbt Type: NPT
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 1800A
• Current - Collector (ic) (max): 1800A
• Current - Collector Cutoff (max): 120mA
• Input Capacitance (cies) @ Vce: 166nF @ 25V
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: E10
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Vces, (v): 1700
• Ic25, Tc = 25°c, Igbt, (a): 2500
• Ic80, Tc = 80°c, Igbt, (a): 1800
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.3
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 670
• Rthjc, Max, Igbt, (k/w): 0.009
• If25, Tc = 25°c, Diode, (a): -
• If80, Tc = 80°c, Diode, (a): 1800
• Rthjc, Max, Diode, (k/w): 0.017
• Package Style: E10
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

© 2011 IXYS All rights reserved
Fig. 1 Typical output characteristics, chip level
Fig. 3 Typical onstate characteristics, chip level
Fig. 5 Typical gate charge characteristics
3600
3200
2800
2400
2000
1600
1200
3600
3200
2800
2400
2000
1600
1200
20
15
10
800
400
800
400
5
0
0
0
0
0
0
2
17V
15V
13V
11V
9V
1
1
4
2
2
6
Q
V
25 °C
g
V
V
CC
CE
CE
[µC]
3
= 900 V
[V]
[V]
8
3
4
125 °C
I
T
10
V
C
vj
CC
= 1800 A
= 25 °C
V
T
= 1300
GE
vj
4
= 25 °C
12
= 15 V
5
14
6
5
Fig. 2 Typical output characteristics, chip level
Fig. 4 Typical transfer characteristics, chip level
Fig. 6 Typical capacitances vs
1000
100
3600
3200
2800
2400
2000
1600
1200
3600
3200
2800
2400
2000
1600
1200
10
1
800
400
800
400
0
0
0
0
0
collector-emitter voltage
V
1
5
GE
17V
15V
13V
11V
= 25 V
9V
1
2
10
3
C
C
C
ies
oes
res
4
2
15
V
5
CE
V
V
MIO 1800-17E10
GE
CE
125 °C
[V]
6
3
[V]
[V]
20
7
8
4
25
25 °C
V
f
V
OSC
GE
OSC
T
9
vj
= 0 V
= 1 MHz
= 125 °C
= 50 mV
10 11 12
30
5
35
6
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