MUBW75-17T8 IXYS, MUBW75-17T8 Datasheet - Page 2
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MUBW75-17T8
Manufacturer Part Number
MUBW75-17T8
Description
MODULE IGBT CBI E3
Manufacturer
IXYS
Datasheet
1.MUBW75-17T8.pdf
(8 pages)
Specifications of MUBW75-17T8
Igbt Type
Trench
Configuration
Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 75A
Current - Collector (ic) (max)
113A
Current - Collector Cutoff (max)
800µA
Input Capacitance (cies) @ Vce
6.6nF @ 25V
Power - Max
450W
Input
Three Phase Bridge Rectifier
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
E3
Vrrm, Rect 1/3 Ph., (v)
2200
Idavm, Tc = 80°c, Rect 1/3 Ph., (a)
155
Rthjc, Typ, Rect 1/3 Ph., (k/w)
0.95
Vces, Inv 3 - Ph., (v)
1700
Ic25, Tc = 25°c, Inv 3 - Ph., (a)
113
Ic80, Tc = 80°c, Inv 3 - Ph., (a)
80
Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v)
2.0
Rthjc, Typ, Inv 3 - Ph., (k/w)
0.28
Vces, Br Chopper, (v)
1700
Ic80, Tc = 80°c, Br Chopper, (a)
34
Rthjc, Typ, Br Chopper, (k/w)
0.62
Package Style
E3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
Output Inverter T1 - T6
Symbol
V
V
I
I
I
P
Symbol
V
V
I
I
C
Q
t
t
t
t
E
E
RBSOA
t
(SCSOA)
R
Output Inverter D1 - D6
Symbol
I
I
Symbol
V
I
Q
t
E
R
CES
GES
RM
C25
C80
CM
d(on)
r
d(off)
f
SC
F25
F80
rr
GE(th)
GES
CE(sat)
on
off
F
rec
CES
tot
iss
thJC
thJC
Gon
rr
Conditions
T
Continuous
T
T
T
T
Conditions
I
I
V
V
V
V
Inductive load, T
V
V
I
R
V
t
Conditions
T
T
Conditions
I
T
(per diode)
I
C
C
C
P
F
F
VJ
VJ
C
C
C
C
CE
CE
CE
CE
CE
GE
CE
C
C
G
= I
= 75 A;
= 75 A; V
= 3 mA; V
< 10 µs; non-repetitive; T
= 75 A; di
= 25°C
= 80°C
= 80°C; t
= 25°C
= 25°C
= 80°C
= 18 Ω; T
= 125°C; V
= 25°C to 150°C
= V
= 900 V; V
= 1000 V; V
= 0 V; V
= 25 V; V
= 900 V; I
= ± 15 V; R
CM
; V
CES
GE
; V
GE
GE
= 15 V
p
GE
F
GE
VJ
GE
/dt = -1400 A/µs;
= 1 ms
C
= 15 V
GE
= ± 20 V
= V
T
T
R
G
= 125°C
= 0 V
= 75 A
GE
= 0 V; f = 1 MHz
VJ
VJ
= 900 V; V
= 18 Ω
= 15 V; I
VJ
= ± 15 V; R
CE
= 25°C
= 125°C
= 125°C
C
= 75 A
GE
T
T
T
VJ
T
G
VJ
VJ
VJ
VJ
= 0 V
= 125°C
= 18 Ω
(T
= 25°C
= 125°C
= 25°C
= 125°C
VJ
= 25°C, unless otherwise specified)
V
min.
min.
CEK
5
Characteristic Values
Characteristic Values
< V
Maximum Ratings
typ.
typ.
800
850
300
850
500
CES
Maximum Ratings
2.2
2.3
2.0
2.4
2.0
6.6
60
30
25
10
95
20
10
- L
S
max.
1700
max.
0.28
± 20
di/dt
113
150
450
400
2.9
0.4
2.4
6.5
0.8
80
92
63
K/W
K/W
mA
mA
mJ
mJ
µC
mJ
nC
nA
nF
ns
ns
ns
ns
ns
µs
W
V
V
A
V
V
A
A
A
V
V
V
V
A
A
Conduction
IGBT (typ. at V
T1-T6
T7
Diode (typ. at T
D1-D6
D7
D11-D16
Equivalent Circuits for Simulation
MUBW 75-17 T8
V
I
V
V
V
V
0
0
0
0
0
= 0.85 V; R
= 1.65 V; R
= 1.0 V; R
= 1.0 V; R
= 1.4 V; R
V
GE
0
J
= 125°C)
= 15 V; T
0
0
0
0
0
= 17 mW
= 28 mW
= 11 mW
= 2.8 mW
= 37 mW
J
R
= 125°C)
0
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