MDI550-12A4 IXYS, MDI550-12A4 Datasheet - Page 3

• Manufacturer Part Number: MDI550-12A4
• Description: MOD IGBT BUCK 1200V 670A Y3-DCB
• Manufacturer: IXYS

Specifications of MDI550-12A4

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 400A
• Current - Collector (ic) (max): 670A
• Current - Collector Cutoff (max): 21mA
• Input Capacitance (cies) @ Vce: 26nF @ 25V
• Power - Max: 2750W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Y3-DCB
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 670
• Ic80, Tc = 80°c, Igbt, (a): 460
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.3
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 59
• Rthjc, Max, Igbt, (k/w): 0.05
• If25, Tc = 25°c, Diode, (a): 750
• If80, Tc = 80°c, Diode, (a): 460
• Rthjc, Max, Diode, (k/w): 0.09
• Package Style: Y3-DCB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
I
V
I
C
C
GE
800
700
600
500
400
300
200
100
900
800
700
600
500
400
300
200
100
A
20
15
10
A
V
0
5
0
0
0.0
5
0
Fig. 1 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
Fig. 5 Typ. turn on gate charge
T
V
T
J
V
I
CE
J
C
= 25°C
CE
= 25°C
= 20V
0.5
= 600V
= 400A
6
500
1.0
7
1000
1.5
8
2.0
1500
9
V
V
CE
GE
2.5
Q
10
G
2000
V
GE
3.0
11
=17V
15V
13V
11V
9V
nC
V
V
I
I
F
I
RM
C
1600
1400
1200
1000
900
800
700
600
500
400
300
200
100
800
600
400
200
120
A
A
80
40
A
0
0
0
0.0
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. forward characteristics of
Fig. 6 Typ. turn off characteristics of
T
J
= 125°C
0.5
200
free wheeling diode
free wheeling diode
1.0
I
1
RM
t
rr
1.5
400
2.0
2
T
J
= 125°C
600
MID 550-12 A4
MDI 550-12 A4
2.5
V
V
-di/dt
CE
F
T
V
I
F
3.0
J
R
3
= 125°C
= 400A
= 600V
800
T
A/
J
V
= 25°C
m
GE
3.5
s
=17V
V
550-12
9V
15V
13V
11V
V
1000
4
300
ns
200
100
0
3 - 4
t
rr