MWI100-12T8T IXYS, MWI100-12T8T Datasheet - Page 5

• Manufacturer Part Number: MWI100-12T8T
• Description: MOD IGBT TRENCH SIXPACK E3
• Manufacturer: IXYS

Specifications of MWI100-12T8T

• Igbt Type: Trench
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 100A
• Current - Collector (ic) (max): 145A
• Current - Collector Cutoff (max): 4mA
• Input Capacitance (cies) @ Vce: 7.21nF @ 25V
• Power - Max: 480W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E3
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 145
• Ic80, Tc = 80°c, Igbt, (a): 100
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 1.7
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 13.5
• Rthjc, Max, Igbt, (k/w): 0.26
• If25, Tc = 25°c, Diode, (a): 135
• If80, Tc = 80°c, Diode, (a): 90
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
[mJ]
[A]
[A]
Inverter T1 - T6
I
I
C
C
E
200
160
120
200
160
120
80
40
28
24
20
16
12
80
40
8
4
0
0
0
0.0
0
5
Fig. 5 Typ. switching energy vs. collector current
Fig. 3 Typ. transfer characteristics
Fig. 1 Typ. output characteristics
V
V
R
T
V
VJ
CE
GE
G
GE
= 3.9 Ω
= 125°C
= 600 V
= ±15 V
0.5
6
= 15 V
40
7
1.0
T
80
8
VJ
1.5
= 25°C
V
V
GE
I
CE
T
C
VJ
9
120
[A]
[V]
[V]
= 25°C
2.0
10
2.5
T
160
VJ
T
11
VJ
= 125°C
= 125°C
3.0
12
200
E
E
E
on
rec
3.5
off
13
V
[V]
[A]
I
GE
C
mJ
E
200
160
120
20
16
12
80
40
24
20
16
12
8
4
0
0
8
4
0
0
0
0
Fig. 4 Typ. turn-on gate charge
Fig. 2 output characteristics
Fig. 6 Typ. switching energy vs. gate resistance
V
V
I
T
T
I
V
C
C
VJ
CE
GE
VJ
CE
100
= 125°C
= 125°C
= 600 V
= ±15 V
= 100 A
= 600 V
= 100 A
5
V
1
GE
200
= 13 V
10
15 V
17 V
19 V
300
2
15
MWI100-12T8T
Q
V
R
CE
G
400
G
[nC]
[V]
[Ω]
20
3
500
25
600
4
700
30
11 V
9 V
20100910c
E rec
E
E off
5 - 7
800
5
on
35