CM75TU-12F Powerex Inc, CM75TU-12F Datasheet - Page 3

IGBT MOD 6PAC 600V 75A F SER

CM75TU-12F

Manufacturer Part Number
CM75TU-12F
Description
IGBT MOD 6PAC 600V 75A F SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet

Specifications of CM75TU-12F

Igbt Type
Trench
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 75A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
20nF @ 10V
Power - Max
290W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Transistor Polarity
N Channel
Dc Collector Current
75A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
290W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-40°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM75TU-12F
Manufacturer:
MITSUBISHI
Quantity:
26
Part Number:
CM75TU-12F
Manufacturer:
MITSUBISHI/三菱
Quantity:
20 000
Part Number:
CM75TU-12F
Quantity:
55
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75TU-12F
Trench Gate Design Six IGBTMOD™
75 Amperes/600 Volts
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Times
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
R
R
R
Symbol
Symbol
R
th(j-c)
t
t
th(j-c)
th(j-c)
C
C
C
d(on)
d(off)
th(c-f)
Q
j
t
oes
res
t
t
ies
rr
= 25 C unless otherwise specified
r
f
rr
'Q
Q
D
j
= 25 C unless otherwise specified
Per Module, Thermal Grease Applied
Per FWDi 1/6 Module, T
Per IGBT 1/6 Module, T
T
c
Point per Outline Drawing
Point per Outline Drawing
Reference Point Under Chip
V
Per IGBT 1/6 Module,
V
V
Switching Operation
CC
CE
GE1
Inductive Load
Test Conditions
Test Conditions
= 300V, I
= 10V, V
R
I
= V
G
E
= 8.3 ,
= 75A
GE2
GE
C
= 15V,
= 75A,
= 0V
c
c
Reference
Reference
Min.
Min.
Typ.
Typ.
1.4
0.29
0.018
100
300
250
150
20
80
Max.
Max.
1.4
0.75
0.43
0.9
Units
Units
C/W
C/W
C/W
C/W
ns
ns
ns
ns
ns
nf
nf
nf
C
3

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