MID300-12A4 IXYS, MID300-12A4 Datasheet - Page 2

• Manufacturer Part Number: MID300-12A4
• Description: MOD IGBT RBSOA 1200V 330A Y3-DCB
• Manufacturer: IXYS

Specifications of MID300-12A4

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 200A
• Current - Collector (ic) (max): 330A
• Current - Collector Cutoff (max): 13mA
• Input Capacitance (cies) @ Vce: 13nF @ 25V
• Power - Max: 1380W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Y3-DCB
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 330
• Ic80, Tc = 80°c, Igbt, (a): 220
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.2
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 29
• Rthjc, Max, Igbt, (k/w): 0.09
• If25, Tc = 25°c, Diode, (a): 450
• If80, Tc = 80°c, Diode, (a): 280
• Rthjc, Max, Diode, (k/w): 0.15
• Package Style: Y3-DCB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
Symbol
d
d
Weight
Free wheeling diodes D1 - D2 / D11 - D12
Symbol
I
I
Symbol
V
I
t
R
R
Module
Symbol
T
T
V
M
RM
F25
F80
rr
VJ
stg
A
F
ISO
S
thJC
thJH
d
Conditions
Creepage distance on surface
Strike distance in air
Conditions
T
T
Conditions
I
I
V
(per IGBT)
with heatsink compound
Conditions
operating
I
Mounting torque (module, M6)
F
F
ISOL
C
C
R
= 300 A; V
= 200 A; di
= 25°C
= 80°C
= 600 V; V
< 1 mA; 50/60 Hz
GE
F
GE
/dt = -1800 A/µs;
= 0 V;
= 0 V;
(terminal, M5)
T
T
T
VJ
VJ
VJ
= 25°C
= 125°C
= 125°C
min.
min.
9.6
10
Characteristic Values
Characteristic Values
250
Maximum Ratings
typ.
typ.
180
200
Maximum Ratings
2.2
1.7
0.3
2.25 - 2.75
-40...+150
-40...+150
2.5 - 3.7
max.
max.
4000
0.15
450
280
2.5
MII 300-12A4
K/W
K/W
mm
mm
Nm
Nm
V~
°C
°C
ns
A
A
V
V
A
g
Conduction
Free wheeling diode (typ. at T
Dimensions in mm (1 mm = 0.0394")
Equivalent Circuits for Simulation
IGBT (typ. at V
V
V
I
0
0
= 1.3 V; R
= 1.3 V; R
V
MID 300-12A4
MDI 300-12A4
GE
0
= 15 V; T
0
0
= 6.2 mΩ
= 2.4 mΩ
R
J
0
= 125°C)
J
= 125°C)
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