CM75RX-24S Powerex Inc, CM75RX-24S Datasheet - Page 3

• Manufacturer Part Number: CM75RX-24S
• Description: IGBT MOD 7PAC 1200V 75A NX SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: 7-PACr

Specifications of CM75RX-24S

• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.15V @ 15V, 75A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 7.5nF @ 10V
• Power - Max: 600W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: Module
• Module Configuration: Six
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 600W
• Operating Temperature Range: -40°C To +150°C
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Leaded Process Compatible: Yes
• Prx Availability: RequestQuote
• Distributorinventory: View
• Voltage: 1200V
• Current: 75A
• Circuit Configuration: 7-Pac
• Recommended Gate Driver: M57159L
• Recommended Dc To Dc Converter: VLA106-15242
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 835-1119

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
CM75RX-24S
Six IGBTMOD™ + Brake NX-S Series Module
75 Amperes/1200 Volts
Electrical and Mechanical Characteristics, T
Inverter Sector
Characteristics
Collector Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Inductive
Load
Switch
Time
Reverse Recovery Time
Reverse Recovery Charge
Turn-on Switching Loss per Pulse
Turn-off Switching Loss per Pulse
Reverse Recovery Loss per Pulse
Emitter-Collector Voltage
Emitter-Collector Voltage
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Internal Gate Resistance
*1 Case temperature (T
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*7 Recommended maximum collector supply voltage V
04/10 Rev. 0
C
) and heatsink temperature (T
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
*1
*1
CC
f
) measured point is just under the chips.
is 800V
(Terminal)
(Terminal)
R
V
V
R
V
Symbol
Symbol
(Chip)
(Chip)
E
V
V
CE(sat)
CE(sat)
t
t
th(j-c)
th(j-c)
I
I
C
Q
GE(th)
C
C
d(on)
d(off)
GES
E
E
CES
Q
t
dc
rec
EC
EC
rr
oes
r
t
ies
res
t
rr
on
off
g
.
G
r
f
*3
*3
*3
*3
*3
Q
D
j
j
= 25°C unless otherwise specified
= 25°C unless otherwise specified
V
CC
I
I
I
E
V
I
I
C
C
I
I
I
I
E
E
C
C
I
C
T
I
R
CC
I
= 75A, V
E
E
C
V
E
= 75A, V
= 75A, V
= 600V, I
V
j
= 75A, V
= 75A, V
= 75A, V
= 75A, V
G
= 75A, V
CC
= 75A, V
= 150°C, Inductive Load
= 75A, V
V
GE
= 75A, V
= 75A, V
±V
V
= 600V, I
I
GE
= 36Ω, Inductive Load
C
CE
GE
= 600V, I
= ±15V, R
Test Conditions
= 7.5mA, V
V
Test Conditions
= 0V, V
Per Switch
Per FWDi
= V
GE
Per IGBT
I
GE
= V
GE
GE
E
C
GE
GE
GE
GE
GE
GE
GE
GE
= 75A
GE
CES
= ±15V,
= 75A, V
GES
= 0V, T
C
= 15V, T
= 15V, T
= 0V, T
= 0V, T
= 15V, T
= 15V, T
= 15V, T
= 0V, T
= 0V, T
CE
C
(I
= 15V, T
= 0V, T
, V
E
G
, V
= 75A,
CE
) = 75A,
= 10V
GE
= 36Ω,
CE
j
= 150°C
= 10V
GE
j
j
j
j
j
j
= 125°C
= 150°C
j
= 0V
j
j
j
= 125°C
= 150°C
= 25°C
= 125°C
= 0V
j
= 125°C
= 150°C
= 25°C
= 25°C
*7
= 25°C
= 15V
*7
*6
*6
*6
*6
*6
*6
Min.
Min.
5.4
—
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—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.05
12.5
1.95
Typ.
175
Typ.
1.7
1.9
2.0
4.0
4.5
1.8
1.7
1.7
1.7
1.8
1.8
1.8
—
—
—
—
—
—
—
—
—
—
—
—
6
8
0
Max.
Max.
2.15
2.25
0.13
2.15
2.25
0.25
300
200
600
300
300
0.5
6.6
0.4
7.5
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
Units
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Units
K/W
K/W
mA
mJ
mJ
mJ
µA
nF
nF
nF
nC
µC
ns
ns
ns
ns
ns
Ω
3