MID200-12A4 IXYS, MID200-12A4 Datasheet - Page 3

MOD IGBT RBSOA 1200V 270A Y3-DCB

MID200-12A4

Manufacturer Part Number
MID200-12A4
Description
MOD IGBT RBSOA 1200V 270A Y3-DCB
Manufacturer
IXYS
Datasheet

Specifications of MID200-12A4

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 150A
Current - Collector (ic) (max)
270A
Current - Collector Cutoff (max)
10mA
Input Capacitance (cies) @ Vce
11nF @ 25V
Power - Max
1130W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Y3-DCB
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
270A
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
270
Ic80, Tc = 80°c, Igbt, (a)
180
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2.2
Eoff, Typ, Tj = 125°c, Igbt, (mj)
21
Rthjc, Max, Igbt, (k/w)
0.11
If25, Tc = 25°c, Diode, (a)
300
If80, Tc = 80°c, Diode, (a)
200
Rthjc, Max, Diode, (k/w)
0.23
Package Style
Y3-DCB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MID200-12A4
Manufacturer:
NIEC
Quantity:
452
© 2000 IXYS All rights reserved
I
V
I
C
C
GE
350
300
250
200
150
100
350
300
250
200
150
100
A
50
20
15
10
A
50
V
0
5
0
0
0.0
5
0
Fig. 1 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
Fig. 5 Typ. turn on gate charge
T
V
T
J
V
I
CE
J
C
= 25°C
= 25°C
CE
= 20V
0.5
= 600V
= 150A
6
200
1.0
7
400
1.5
8
2.0
9
600
V
V
CE
GE
2.5
10
Q
G
800
V
GE
3.0
11
=17V
15V
13V
11V
9V
V
V
nC
I
F
I
I
C
RM
600
500
400
300
200
100
100
350
300
250
200
150
100
A
A
50
80
60
40
20
A
0
0
0
0.0
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. forward characteristics of
Fig. 6 Typ. turn off characteristics of
MII 200-12 A4
T
J
= 125°C
0.5
200
free wheeling diode
free wheeling diode
1.0
I
1
RM
t
rr
1.5
400
2.0
2
T
J
600
= 125°C
2.5
MID 200-12 A4
MDI 200-12 A4
-di/dt
V
V
CE
F
3.0
3
T
V
I
F
J
R
800
= 125°C
= 150A
A/
= 600V
T
V
J
m
3.5
GE
= 25°C
s
V
=17V
15V
13V
11V
200-12
9V
V
1000
4
250
200
150
100
50
0
ns
3 - 4
t
rr

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